2014
DOI: 10.1038/srep07505
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Superenhancers: Novel opportunities for nanowire optoelectronics

Abstract: Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and … Show more

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Cited by 14 publications
(9 citation statements)
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“…The wavelength-dependent complex refractive index of Si fitted with the experimental data [ 44 ] and that of the inner shell, the outer shell and the surrounding medium (air) are set to be 2.5, 1.5 and 1.0, respectively. Note here that for simplicity, we have neglected the wavelength dependence of the refractive indices to neatly determine the impact of their size on the absorption spectra [ 30 , 31 , 45 ], as discussed later; however, as long as the wavelength dependence is negligible, our results could apply to any other dielectric with similar refractive index, such as SiO 2 , Si 3 N 4 and so forth.…”
Section: Model and Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The wavelength-dependent complex refractive index of Si fitted with the experimental data [ 44 ] and that of the inner shell, the outer shell and the surrounding medium (air) are set to be 2.5, 1.5 and 1.0, respectively. Note here that for simplicity, we have neglected the wavelength dependence of the refractive indices to neatly determine the impact of their size on the absorption spectra [ 30 , 31 , 45 ], as discussed later; however, as long as the wavelength dependence is negligible, our results could apply to any other dielectric with similar refractive index, such as SiO 2 , Si 3 N 4 and so forth.…”
Section: Model and Methodsmentioning
confidence: 99%
“…The wavelength-dependent complex refractive index of Si fitted with the experimental data [44] and that of the inner shell, the outer shell and the surrounding medium (air) are set to be 2.5, 1.5 and 1.0, respectively. Note here that for simplicity, we have neglected the wavelength dependence of the refractive indices to neatly determine the impact of their size on the absorption spectra [30,31,45], as discussed later; however, as long as the wavelength dependence is negligible, our results could apply to any other dielectric with similar refractive index, such as SiO 2 , Si 3 N 4 and so forth. The insets are the cross-sectional views of the NW only coated with the outer shell (OSNW) (left), DSNW (middle) and the NW only coated with the outer shell (ISNW) (right), where J ph is the photocurrent density; t 1 , t 2 , t = t 1 + t 2 = 180 nm, r = 100 nm and R = r + t = 280 nm are the outer shell thickness, the inner shell thickness, the total shell thickness, the core radius and the total radius; m 3 , m 2 , m 1 and m 0 are the complex refractive indices of the Si core, the inner shell, the outer shell and air, respectively.…”
Section: Modelmentioning
confidence: 99%
“…The wavelength-dependent complex refractive index of Si fitted with the experimental data [44], and that of the inner shell, the outer shell, and the surrounding medium (air) are set to be 2.5, 1.5, and 1.0, respectively. Note here that for simplicity, we have neglected the wavelength dependence of the refractive indices to neatly determine the impact of their size on the absorption spectra [30,31,45], as shown in Figure 5 later; however, as long as the wavelength dependence is negligible, our results could apply to any other dielectric with similar refractive index, such as SiO2, Si3N4, etc.…”
Section: Modelmentioning
confidence: 99%
“…We take average AE as a figure of merit and maximize it throughout the process of parameter sweeping. 18 AE is defined as…”
Section: B Influence Of the Substrate And Geometrical Configurationsmentioning
confidence: 99%