Superhigh energy storage density on-chip capacitors with ferroelectric Hf_0.5Zr_0.5O₂/antiferroelectric Hf_0.25Zr_0.75O₂ bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Abstract

Thanks to excellent compatibility with complementary metal-oxide-semiconductor (CMOS) process, high permittivity HfO2/ZrO2-based thin films have emerged as potential candidates for high-performance on-chip energy storage capacitors of miniaturized energy-autonomous systems. However,...

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics

“…Regarding the sample without Al doping, the resulting peak is located at 30.8 • , corresponding to the T-(011) phase, and the position of the resulting peaks have no change, as the Al/(Hf + Zr) ratio rises from 1/40 to 1/32. When the Al/(Hf + Zr) ratio is 1/24, the resulting two peaks appear at 30.4 • and 30.17 Moreover, Table 1 compares our work with other HfO 2 -based AFE capacitors [5][6][7]9,10,13,14,21,22]. It is observed that our capacitor with the Al/(Hf + Zr) ratio of 1/16 demonstrates the highest ESD at 6 MV cm −1 together with a perfect ESE.…”

“…Further, in combination with good reliability, excellent thermal stability and eco-friendly properties, the doped HfO 2 AFE dielectrics are considered to be very promising materials for on-chip energy storage applications [8]. To improve the ESD of capacitors, our recent studies indicate that the employment of a 1 nm Hf 0.5 Zr 0.5 O 2 underlying layer between the bottom electrode and the AFE Hf 0.25 Zr 0.75 O 2 layer can promote the generation of the AFE tetragonal (T)-phase in the AFE layer [9]. In addition, Yang et al reported a HfO 2 /ZrO 2 nanolaminate with a 2.2 nm HfO 2 thin film as the insertion layer between the TiN bottom electrode and ZrO 2 AFE thin film and achieved an ESD of up to 49.9 J cm −3 [10].…”

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO2 Antiferroelectric Films for Energy Storage Capacitors

“…When the electric field is 3.03 MV/cm or less, the P–E curve behaves like a linear dielectric. This is because when the applied electric field is smaller than E T–O , strong polarization in the dielectric is unable to be generated. , As the maximum electric field increases from 3.03 to 6.21 MV/cm, P max increases quickly from 9.88 to 49.38 μC/cm 2 ; meanwhile, P r also increases from 0.22 to 16.12 μC/cm 2 .…”

“…Therefore, it is challenging to achieve an ideal ESD and ESE simultaneously. Recently, nanoscale multilayer dielectrics based on AFE materials have been attempted for energy storage capacitor applications, such as Hf 0.5 Zr 0.5 O 2 (1 nm)/Hf 0.25 Zr 0.75 O 2 and TiO 2 (1 nm)/ZrO 2 /TiO 2 (1 nm), demonstrating good potential for enhancement of device performance. In a word, to obtain superior dielectric candidates for energy storage applications, it is indispensable to explore atomic layer doping of multiple components for AFE energy storage capacitors …”

A multifunctional oriented nanocrystalline Pb0.91La0.06Zr0.8Ti0.2O3 relaxor ferroelectric thin film for chip power and thermal management

“…Thus, it can protect the components from breakdown during the operating of the chip. 9,10 Based on the ECE and pyroelectricity, ferroelectric thin films can achieve efficient solid-state refrigeration and temperature change detection in the micro-region of the chips. 11–13 Therefore, a promising approach that has gained considerable attention is the utilization of ferroelectric thin films for chip-level power and thermal management.…”