Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates

Takagaki, Y.; Santos, P. V.; Wiebicke, E.; Brandt, O.; Schönherr, H.-P.; Ploog, K. H.

doi:10.1063/1.1509471

Cited by 84 publications

(44 citation statements)

References 10 publications

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“…Extension of these techniques to group III-Nitride systems is important, as their large gap enables high-power/high-temperature applications and high repetition rate SPSs covering a broad spectral range. Also, the high sound velocities and the stronger electromechanical coupling coefficients of nitrides, as compared to (Al,Ga)As materials, 16 would allow for high frequency applications using all-nitride devices. While experiments on modulation of the electronic properties of GaN films 17 as well as transport of charge carriers in GaN nanowires 5 by SAWs have been reported, studies on acoustically driven modulation of the optical emission of nitride-based QDs have not yet been demonstrated.…”

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confidence: 99%

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

et al. 2015

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The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.Surface acoustic waves induce periodic strain and piezoelectric fields near a semiconductor surface which can dynamically modify their basic properties. The use of SAWs is an expanding research field, which has been widely applied to semiconductor quantum wells (QWs) 1-3 , wires 4-6 and dots (QDs) [7][8][9][10][11] .By controlling the excitonic emission in III-V semiconductor QDs by SAWs, high repetition rate single photon sources (SPSs) 7-9 and periodic laser mode feeding 12 have been reported. Also, dynamic control of individual QDs 11 and on-demand single-electron transfer between distant quantum dots 13 have been demonstrated. In a more general context, a proposal for onchip quantum transducers based on SAWs enabling long-range coupling of many qubits has been recently put forward 14 . In addition to the band-edge modulation, which determines the QD emission wavelength, the tunable strain field of the SAW can be used to modify other properties related to the band structure, as the exciton binding energy, in a similar way as static strain field 15 . While most of the SAW-related work reported in semiconductor structures refers to III-V systems, studies on group III-Nitrides are scarce. Extension of these techniques to group III-Nitride systems is important, as their large gap enables highpower/high-temperature applications and high repetition rate SPSs covering a broad spectral range. Also, the high sound velocities and the stronger electromechanical coupling coefficients of nitrides, as compared to (Al,Ga

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confidence: 99%

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

et al. 2015

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“…AlN is one of the most suitable materials for high-frequency filters, duplexers, and resonators because of its high SAW velocity and its insulating nature. 2,3 On the other hand, GaN-based SAW delay-line oscillators have shown their potential as visible-blind remote UV sensors. 4 Given that the bandgap of In x Ga 1-x N can be tuned from 0.64 eV (x ¼ 1) to 3.4 eV (x ¼ 0) 5 and that the alloy exhibits a higher electromechanical coupling than GaN, InGaN-based SAW devices are good candidates for sensitive visible light sensors.…”

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Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg

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Domènech-Amador

Artús

et al. 2012

Journal of Applied Physics

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We have studied the temperature dependence and anharmonic coupling of the local vibrational modes (LVMs) associated with Mg-H complexes in heavily doped InN:Mg. Two main LVM peaks are observed which are probably related to two different H-impurity bond lengths. The temperature dependence of the higher-frequency mode, which exhibits a monotonic frequency downshift and broadening with increasing temperature, can be explained by LVM dephasing due to acoustic phonon scattering. The lower-frequency mode displays an anomalous behavior as its frequency decreases initially and then starts to increase linearly above room temperature. The anharmonic coupling of the lower-frequency mode to a molecular mode of the impurity complex is suggested as a possible cause for this behavior.

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“…The operation frequency of a SAW device is closely related to the spacing of the interdigital transducer (IDT) that is significantly limited by the photolithograph capability (Springer et al, 1999). Thus one way to achieve higher passing frequencies is to use crystals with a higher speed of sound, such as sapphire (Caliendo, 2003), SiC (Takagaki, 2002) or diamond (Yamanouchi et al, 1989) (Nakahata et al, 1992).…”

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confidence: 99%