Atomically thin PtSe 2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe 2 films by molecular beam † The authors declare no competing financial interest. 1 arXiv:1703.04279v2 [cond-mat.mtrl-sci] 15 Mar 2017 epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe 2 .
KeywordsPtSe 2 , Molecular beam epitaxy (MBE), Raman, ARPES, Transition metal dichalcogenide (TMDC) Layered transition metal dichalcogenides (TMDCs) have attracted extensive interests for applications in electronics, optoelectronics and valleytronics due to the strong spin-orbit coupling, sizable band gap and tunability of the electronic structure by quantum confinement effect. [1][2][3][4] In the past decade, this has been witnessed by the significant efforts conducted on the atomically thin MoS 2 film. 5-7 However, its low mobility has limited applications, for inbstance, in high speed electronics. 8,9 Finding thin films of other TMDC with better properties is highly desirable. PtSe 2 has emerged as an interesting compound that belongs to TMDC.Although the bulk crystal is a semimetal, 10,11 monolayer (ML) platinum diselenide (PtSe 2 ) has been revealed to be a semiconductor with a band gap of ≈ 1.2 eV. 12 Importantly, the charge-carrier mobility of PtSe 2 has been predicted among the highest in TMDCs 9 and has been experimentally shown to be comparable to black phosphorene 13 yet with the advantage of much improved stability. 14 This makes PtSe 2 a promising candidate for high-speed electronics. Moreover, the hidden helical spin texture with spin-layer locking in monolayer PtSe 2 has been recently revealed, 15 and such spin physics induced by a local Rashba effect has great potential for electric field tunable spintronic devices. 16 In addition, remarkable performance