This article theoretically explores the formation of
dumbbell (DB)-like structures by elemental adsorption on the recently
synthesized C3N monolayer. Owing to the repulsion from
N atoms, different elements from groups III, IV, and V (B, C, Si,
Ge, P, and As) have been examined to form DB-like cages when adsorbed
on the opposite sides of the substrate. After establishing the dynamical
and thermodynamic stability of these materials, their mechanical durability
is analyzed. DBs formed by adatoms like P and As provide the highest
in-plane stiffness while that by B exhibits the highest Poisson ratio.
The ultimate tensile strain turns out to be quite high (around 18%)
for the DB C3NP and C3NAs. Electronic band structure
depicts semimetallic and semiconducting characteristics depending
on the type of adsorbate that can be further tuned via external strain.
Both DB C3NP and C3NAs undergo an indirect-to-direct
band gap transition, while the semimetals show band gap opening of
the order of meV under applied tension. The presence of space–time
inversion symmetry with a well-known effective low-energy tight-binding
Hamiltonian easily captures the event of linear band crossings in
these materials. The valence orbital theory also nicely explains the
origin of Dirac cones as well as the semiconducting indirect band
gaps. There is visible anisotropy in the Fermi velocity, which can
embrace high values such as 7.5 × 105 ms–1 at a specific direction, and this inhomogeneity measure is remarkably
high (around 90%) for the Dirac materials. Electronic transport properties
such as carrier-dependent effective mass and mobility also possess
anisotropies by their very exotic nature. The findings here highlight
a distinct class of 2D carbon nitrides with anisotropic Dirac semimetals
and indirect gap semiconductors with plausible synthesis routes, which
show great potential in nanodevice applications.