Superior supercapacitive performance of Cu₂MnSnS₄ asymmetric devices

Abstract

Renewable energy sources are the cornerstone of a sustainable future in today’s modern world. Transition metal sulfides in today’s research in energy storage devices are currently being explored as an...

Quaternary Cu2FeSnS4/PVP/rGO Composite for Supercapacitor Applications

“…The detailed procedure and the method of calculations are clearly mentioned in our previous work. 36 The capacitive and diffusive contributions in terms of the specific capacity in percentages of all the electrodes are shown in Figure 5g. Figure 5h displays the capacitive-and diffusion-controlled contributions calculated from CV scans at 5 mV/s for the best-performing Cu 2 FeSnS 4 / PVP/rGO electrode.…”

“…The Trasatti method is used to evaluate capacitive contribution from electrical double-layer and pseudocapacitive reactions. The detailed procedure and the method of calculations are clearly mentioned in our previous work . The capacitive and diffusive contributions in terms of the specific capacity in percentages of all the electrodes are shown in Figure g.…”

“…Subsequently, the obtained Cu 2 FeSnS 4 , Cu 2 FeSnS 4 /PVP, and Cu 2 FeSnS 4 /PVP/rGO powders were given for characterization, and electrochemical performance was carried out for all samples . The Cu 2 FeSnS 4 compound was formed by dissolving water in metal chlorides and precursors of thiourea, and necessary chemical reactions during the synthesis of materials are described. , …”

Morphological evolution of carnation flower-like Cu2CoSnS4 battery-type electrodes

“…The detailed calculations of the charge storage process using this method are clearly discussed in our previous work. 52 Plotting the reciprocal of the specific capacity ( q −1 ) vs. the square root of the scan rates ( v 1/2 ) and q vs. v −1/2 gives linear correlations, which take into account the semi-infinite diffusion of the ions. Owing to the electrode internal resistance and deviation from the semi-infinite ion diffusion from this linear relationship, the data points deviated at high scan rates.…”

“…The basis of the technique is charged species (ions) on inner surfaces is diffusion-controlled route, and electrode outer surface is non-diffusion-controlled process which is independent of the scan rate. The detailed calculations of the charge storage process using this method is clearly discussed in our previous work [52]. Plotting the reciprocal of specific capacity (q -1 ) vs square root of scan rates (v 1/2 ) and q vs v -1/2 give linear correlation which would take an account the semi-infinite diffusion of the ions.…”