Abstract:A superjunction metal-oxide-semiconductor field-effect transistor (SJ-MOSFET) with a trench contact on partly relatively lightly doped p-pillar is proposed and investigated by TCAD simulations. At reverse conduction state, since electrons in the n-pillar can be easily collected by the trench contact, the hole injection efficiency of the body diode can be lowered to reduce the reverse recovery charge (Q rr ). Besides, the partly relatively lightly doped p-pillar increases the resistance of the hole extraction p… Show more
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