Supersaturation-dependent step-behavior of InGaN grown by metal organic vapor phase epitaxy

Kimura, Akitaka; Futagawa, Norio; Usui, Akira; Mizuta, Masahiro

doi:10.1016/s0022-0248(01)01049-1

Cited by 14 publications

(14 citation statements)

References 11 publications

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“…Obviously, further investigations are necessary to confirm these scenarios. Since the step energy of Ga-face GaN is known, 15) we estimated the step energy of N-face GaN from the average interstep distances of all growth spirals along the [1 100] direction for various TMG flow rates. The results are plotted in Fig.…”

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confidence: 99%

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Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

Lin

Akasaka

Yamamoto

2013

Appl. Phys. Express

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Nucleus and spiral growth mechanisms of N-face GaN(0001) were studied in selective-area metalorganic vapor phase epitaxy. An almost step-free N-face GaN surface is obtained by nucleus growth within a selective area without screw-type dislocations, while growth spirals are induced by the spiral growth mode when screw-type dislocations exist. The growth mechanism of N-face GaN is consistently explained by a theoretical analysis [W. K. Burton, N. Cabrera, and F. C. Frank: Philos. Trans. R. Soc. London, Ser. A 243 (1951) 299]. The step and activation energies are estimated to be 2.1 J/m2 and 2.15 eV, respectively.

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confidence: 99%

“…Using the step energy of the Ga-face GaN (1.5 J/m 2 ), 15) we calculated for Ga-face GaN to be 0.043 to 0.092. Meanwhile, the step energy of N-face GaN can be estimated from the ratio of N to Ga as follows:…”

mentioning

confidence: 99%

Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

Lin

Akasaka

Yamamoto

2013

Appl. Phys. Express

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“…Such results can be visualized by looking at a mechanical spring in a direction perpendicular to its axis. Spiral growths in various materials with the VLS mode have been reported [29][30][31][32][33][34]. Based on the reported theories and simulations, its growth mechanism has been attributed to the formation of a screw dislocation in the earlystage of the growth [29,30,32,34].…”

Section: Discussionmentioning

confidence: 98%

“…It is noted that in a HAADF image, a brighter region corresponds to higher indium content. Therefore, it is deduced that the InGaN growth follows a spiral deposition pattern with a quasiperiodical distribution of indium content along the growth direction [29][30][31][32][33][34]. Figure 9 shows the top-view SEM image of an InGaN NN.…”

Section: Analyses Of Transmission Electronmentioning

confidence: 99%

Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor‐Liquid‐Solid Growth Mode

Chang

Liao

Chen

et al. 2012

Journal of Nanomaterials

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The spiral deposition of InGaN with a quasiperiodical distribution of indium content along the growth direction for forming InGaN nanoneedles (NNs) with the vapor-liquid-solid (VLS) growth mode is demonstrated. The VLS growth is implemented by using Au nanoparticles (NPs) as the catalyst in metalorganic chemical vapor deposition. The Au NPs on a GaN template are generated through pulsed laser irradiation. The observation of spiral deposition is based on the analyses of the scanning results in the high angle annular dark field and energy dispersive X-ray measurements of transmission electron microscopy. In the measurements, the composition variations along and perpendicular to the growth direction (thec-axis) are illustrated. The alternating indium content along the growth direction is attributed to a quasiperiodically pulsed behavior of indium supersaturation process in the melted Au NP at the top of an InGaN NN. The spiral deposition of InGaN is due to the formation of an NN at the location of an Au NP with a screw-type dislocation beneath in the GaN template, at which the growth of a quasi-one-dimensional structure can be easily initiated.

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“…where W is the volume of a Ga-N pair (2:27 Â 10 À29 m 3 ), is the step energy (1.5 J/m 2 ), 12) s is the number of growth spirals (2), k is the Boltzmann constant (1:381 Â 10 À23 J K À1 ), and T is the growth temperature.…”

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confidence: 99%

Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

Akasaka

Kobayashi

Kasu

et al. 2013

Appl. Phys. Express

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GaN was grown in spiral growth mode by metalorganic vapor phase epitaxy in selective areas having screw-type dislocations. Relationships between the growth rate and supersaturation provide a novel way to estimate the evaporation energy of GaN, which turns out to be carrier gas dependent: 4:3 AE 0:9 eV for N 2 and 2:1 AE 0:4 eV for H 2 . The latter is significantly smaller, probably due to enhanced etching by H 2 . Suppression of excessive nucleation by etching in H 2 may be responsible for the formation of step-free GaN surfaces at low temperatures in selective areas free from screw-type dislocations.

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Supersaturation-dependent step-behavior of InGaN grown by metal organic vapor phase epitaxy

Cited by 14 publications

References 11 publications

Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor‐Liquid‐Solid Growth Mode

Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy

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