Suppress of dislocations induced by feedstocks weight in cast-mono crystalline silicon

Huang, Jie; Hu, Dongli; Yu, Xuegong; Chen, Hongrong; Yuan, Shu; Yang, Deren

doi:10.1016/j.solener.2021.05.035

Cited by 9 publications

(6 citation statements)

References 23 publications

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“…Compared with Cz-Si, dislocations are easily introduced in CM-Si due to lacking of necking technique in directional solidification. As one of the most detrimental defects in silicon, dislocation generally originates from thermal stress, [11][12][13][14][15][16] mechanical damage stress, [17][18][19][20] lattice mismatch around the seed junctions or metal precipitation, [21] etc. Once formed, they tend to develop into extended defects as dislocation clusters by moving and propagating along with the preferred directions and exhibit cascade-like patterns in the minority carrier's lifetime maps.…”

Section: Dislocationmentioning

confidence: 99%

“…[28] Dislocations originating from seed junctions can be effectively controlled by defect engineering, [21,[27][28][29][30][31][32][33] while those caused by mechanical damage stress on seeds should be limited by other strategies. Huang et al [18] systematically studied the impacts of indentation morphology caused by feedstocks on seed surface on dislocation generation and mobilization. They applied buffer layers on Ga-doped seeds to release stress from feedstocks weight and thus to reduce dislocation density.…”

Section: Dislocationmentioning

confidence: 99%

“…Several reports also focused on the dislocations induced by mechanic stress and carried out corresponding methods to control them. [17][18][19][20] Another problem is the thermal stress that often occurs during growth or cooling. Jiptner et al [34] reported that dislocation density induced by thermal stress during cooling process is generally in the order of 10 3 cm À2 and that local dislocation density is as high as 10 4 cm À2 in the periphery of the ingot.…”

Section: Dislocationmentioning

confidence: 99%

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Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

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Cast‐mono silicon (CM‐Si) is a promising substrate to fabricate cost‐effective photovoltaic (PV) wafers used for solar cells with higher efficiency compared with conventional cast multicrystalline silicon (mc‐Si) due to its high throughput and good ingot quality. However, the unavoidable appearance of defects like dislocation, subgrain boundaries, impurities, multicrystallization, and twins, seriously limits its mass‐scale applications in the PV industry. In this review, the growth characteristics of the CM‐Si method are introduced first. Then, the attention is focused on the defects in CM‐Si. Other issues related to production costs that restrict the development of CM‐Si are also addressed in detail, such as seed cost and recycled seeds, n‐type CM‐Si, and large‐size CM‐Si. Finally, a conclusion is made and the prospects are given about the CM‐Si technique.

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Section: Dislocationmentioning

confidence: 99%

Section: Dislocationmentioning

confidence: 99%

Section: Dislocationmentioning

confidence: 99%

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Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

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“…[5] These metal impurities will diffuse into the Si melt and then cast mono-Si ingot, resulting in the formation of red zone at the bottom and top of the cast mono-Si ingot. [3][4][5][6] The red zone has a significant impact on the performance of solar cells due to its severe leakage current and low photoelectric conversion efficiency. [3] In actual production, the red zones need to be removed from the top and bottom of Si bricks before the remaining parts can be sliced into Si wafers.…”

Section: Introductionmentioning

confidence: 99%

Effects of Impurity Barrier Layer on the Red Zone at the Bottom of Cast Monocrystalline Si Ingot for Solar Cells

Chen,

Hu,

Zhang

et al. 2023

Solar RRL

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A technique to prepare low‐cost high‐purity quartz sheets as impurity barrier layers between the crucible and the seed crystal is proposed herein to improve the casting process of monocrystalline Si (mono‐Si) ingots. The results show that the diffusion of metal impurities from the crucible toward a cast mono‐Si ingot can be hindered, increasing the minority carrier lifetime of Si crystals and reducing the height of the red zone at the bottom of the ingot. Solar cell devices assembled from cast mono‐Si ingots exhibit the enhancement in their overall photoelectric conversion efficiency (η) by 0.76% in comparison to those based on conventional mono‐Si ingots. Therefore, high‐purity quartz sheets as impurity barrier layers for the casting of mono‐Si ingots have great application potential in the photovoltaic industry.

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“…As the directional solidification process manufacturing cost is less and the c-Si based ingots have more conversion efficiency, the Q-Si could lead the PV market in near future. [7,8] The nanostructured and pore silicon solar cells are cost effective for the PV applications. [9][10][11][12][13] The growth process impacts on the chemical reaction, and the current review clarifies how impurity formation and distribution of the grown silicon ingot are affected by the components of the furnace system.…”

Section: Introductionmentioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Suppress of dislocations induced by feedstocks weight in cast-mono crystalline silicon

Cited by 9 publications

References 23 publications

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Effects of Impurity Barrier Layer on the Red Zone at the Bottom of Cast Monocrystalline Si Ingot for Solar Cells

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

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