Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers

Abstract

We demonstrate suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers. Crack-free GaN with a thickness of 2μm was obtained. Epilayers of SiC (0–1μm), thin AlN (50nm), and GaN (1–3μm) were prepared on 3in. (111)Si substrates (GaN∕AlN∕SiC∕Si) by metalorganic vapor-phase epitaxy. Cracking of GaN is suppressed with thicker SiC (1μm), whereas cracks are generated in GaN without SiC and with thinner SiC (50nm). Transmission electron microscopy analysis revealed monocrystalline wurzite structure of GaN. Current-voltage measurements showed breakdown voltage exceeding 250V, indicating its potential for high voltage application.

Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE

“…The most common growth direction for GaN is normal to the basal plane {0 0 0 1}, along the direction /0 0 0 1S, similar to the case in our previous study [12]. GaN lacks inversion symmetry along /0 0 0 1S, and the two directions, [0 0 0 1] and ½0 0 01, are distinguished with each other [13][14][15].…”

“…The temperature in the high-temperature step was 1100 1C. The detailed sample preparation procedure may be found elsewhere [12,16,17]. Subsequently, the growth of hightemperature AlN and GaN with a thickness of 50 nm and 1 mm, respectively, was carried out by means of metalorganic The lattice parameter a* is a virtual lattice parameter that corresponds to the a-axis in a hexagonal lattice.…”

“…Table 1 layers. In the previous paper, we have reported the suppression of crack generation in GaN on Si using 3C-SiC intermediate layers [12].…”

Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si

“…Хорошо известно [1,2], что карбид кремния является подходящей по многим параметрам и, в частности, по параметрам решетки, подложкой для роста слоев GaN и AlN. В связи с этим в настоящее время ведутся активные исследования по росту карбида кремния на кремнии [3].…”

Realization of AlGaN/GaN HEMTs on 3C‐SiC/Si(111) substrates

“…On the other hand, (111) oriented cubic SiC can be employed as an intermediate layer for the growth of hexagonal phase GaN on Si. The suppression of crack generation in GaN grown on 3C-SiC/Si [10,11] as well as an enhancement of GaN crystal quality as compared with similar structures grown on Si [12,13] 2 Experimental Good quality 3C-SiC thick films are obtained by chemical vapor deposition (CVD). In this work, up to 2.2 µm 3C-SiC films were grown on 2 in.…”