Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt

Dutta, P.S.; Ostrogorsky, A.G.

doi:10.1016/s0022-0248(98)00621-6

Cited by 48 publications

(37 citation statements)

References 22 publications

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“…The use of an alternating magnetic field located in the vicinity of the solid-liquid interface [3], of an internal baffle moving at a constant distance from the interface [4] or the double crucible Czochralski technique [5] have been proposed with the aim of preserving the characteristic of the liquid (concentration, temperature) in a thin layer close to the Solid/Liquid interface, allowing to improve the materials homogeneity. With these methods, most of the melt is used as a feed for the thin liquid layer and a special design is required to limit the interactions between the thin layer and the remaining melt [6].…”

Section: Principle Of Feeding Techniquesmentioning

confidence: 99%

Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys

Vincent¹,

Dı́az-Guerra²,

Piqueras³

et al. 2007

AIP Conference Proceedings

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Abstract. In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for the preparation of GaSb and GaInSb materials is presented. The different elements of the set-up are detailed as well as the preparation process. The different configurations that have been used for material production are briefly described and the principal results are summarized. In the case of Te-doped GaSb materials, the study, focused on the grain size and structure of the as-grown materials, showed that single crystals can be obtained with the VFM. In the case of GaInSb materials, the study, focused on the spatial indium distribution in the solid phase prepared with the different VFM configurations, showed that an effective band edge reduction can be achieved.

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Section: Principle Of Feeding Techniquesmentioning

confidence: 99%

Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys

Vincent¹,

Dı́az-Guerra²,

Piqueras³

et al. 2007

AIP Conference Proceedings

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“…The di±culty of growth of such ternary compounds as GaInAs and GaInSb stems from the large solidus-liquidus separation of the phase diagram and thus a small value of the In segregation coe±cient. The rejected solute accumulates at the interface and is transported by di®usion and convection, the latter having a major e®ect on the quality and the composition uniformity of the grown crystals [2,13]. Various defects such as striations or cellular structure in ternary In-containing crystals leading to poly-crystallinity when the solute concentration exceeds a critical value [47] are often observed.…”

Section: Phase Boundariesmentioning

confidence: 99%

“…Stress caused by the temperature gradients (as well as by the compositional inhomogeneity in ternary compounds induced by segregation) could result in the formation of cracks in brittle crystals. Compositional strain in ternary crystals containing Ga and In could greatly exceed a thermo-elastic one since the tetrahedral radii of the two substituting atoms Ga and In di®er by 12 per cent [13]. When the stress level exceeds a critical value, a plastic creep occurs in the ductile crystals.…”

Section: Assessment Of Crystal Qualitymentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

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Abstract:Numerical simulation of industrial crystal growth is di¯cult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the di¬erent methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

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“…Thermoelasicity problem is three-dimensional even for an axisymmetric crystal, except the case of special orientation of the principal crystal axes [27,47]. Stresses caused by the temperature gradients (as well as by the compositional inhomogeneity in ternary compounds induced by segregation) could result in the formation of cracks in the crystals [9]. When stress level exceeds a critical value, a plastic creep occurs.…”

Section: Mathematical Modelsmentioning

confidence: 99%

Industrial Challenges for Numerical Simulation of Crystal Growth

Ofengeim¹,

Zhmakin

2003

Lecture Notes in Computer Science

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Abstract. Numerical simulation of industrial crystal growth is difficult due to its multidisciplinary nature and complex geometry of real-life growth equipment. An attempt is made to itemize physical phenomena dominant in different methods for growth of bulk crystals from melt and from vapour phase and to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of computational engine and graphic user interface of industryoriented codes is discussesd. In conclusion, a simulator for the entire growth process of bulk crystals by sublimation method is described.

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Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt

Cited by 48 publications

References 22 publications

Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys

Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys

Industrial challenges for numerical simulation of crystal growth

Industrial Challenges for Numerical Simulation of Crystal Growth

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