Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultrathin Body nMOSFETs

Shimizu, K.; Saraya, Takuya; Hiramoto, Toshiro

doi:10.1109/led.2010.2041179

Cited by 10 publications

(9 citation statements)

References 15 publications

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“…The mobility dominated by this scattering is called μ fluctuation . 32,33) It has been confirmed that in very thin SOI below silicon thickness of 4 nm, μ fluctuation is more profound than volume inversion mobility enhancement. 34,35) The height of the fabricated nanowire in the present study is only 3 nm.…”

Section: Origins Of Observed Phenomenamentioning

confidence: 96%

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

Liu¹,

Mizutani²,

Saraya³

et al. 2022

Jpn. J. Appl. Phys.

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In this study, the width dependence of on-current variability in extremely narrow gate-all-around (GAA) silicon nanowire MOSFET down to 2nm width is analyzed by variability decomposition into components as well as analyzing the Pelgrom plot. It is found that the current variability rapidly increases below 4nm mainly due to quantum-effect-induced threshold voltage variability and silicon-thickness-fluctuation-induced mobility fluctuation (μfluctuation). The current variability becomes even worse in 2nm, which is fundamentally caused by line width roughness.

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Section: Origins Of Observed Phenomenamentioning

confidence: 96%

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

Liu¹,

Mizutani²,

Saraya³

et al. 2022

Jpn. J. Appl. Phys.

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“…For example, it was pointed out recently that the occupied charge density transferring caused by the quantum confinement is related to the suppression of the electron mobility degradation in (100)-oriented double-gate ultra-thin body nMOSFETs. [26] In the following, we will examine the (100) channel double-gate structure shown in Fig. 1.…”

Section: Quantum Confinement Effectsmentioning

confidence: 99%

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

Jiang¹,

Li²

2012

Chinese Phys. B

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By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

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“…1, the simulation results obtained using the D ac T Si model exhibit good agreement with the experimental data. 12,[18][19][20][21][22] Figure 2 shows the mobility enhancement induced by uniaxial strain in (110)=〈110〉 DG MOSFETs. Analytical expressions for the strain-induced valley splitting and the change in the Δ2 masses as well as the parameters used in these calculations are described in our previous works.…”

mentioning

confidence: 99%

“…Symbols: experimental data. 12,[18][19][20][21][22] Lines: mobility data simulated using the D ac fitting equation.…”

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confidence: 99%

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Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs

Choi¹,

Sun²,

Shin³

2015

Appl. Phys. Express

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The stress effect in uniaxially strained (100)- and (110)-oriented double-gate silicon-on-insulator nMOSFETs is analyzed. A model of the silicon-thickness-dependent deformation potential ( ) is used to accurately calculate the mobility by considering the quantum confinement effect. The mobility enhancements in the (100) and (110) orientations were found to exhibit considerably different silicon thickness dependencies. As the silicon thickness decreases, the mobility enhancement in the (100) case exhibits a second peak, whereas it diminishes in the (110) case. This phenomenon results from differences in the quantization mass that affect the energy differences between the first subbands of two- and four-fold degenerate valleys.

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Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultrathin Body nMOSFETs

Cited by 10 publications

References 15 publications

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs

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