Suppression of oxidation enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon implanted channels

Ban, I.; Öztürk, Mehmet C.; Demirlioglu, E.

doi:10.1109/iit.1996.586541

Cited by 3 publications

(4 citation statements)

References 17 publications

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“…Ban et al [2], demonstrated low values of junction leakage below about 5x10 14 cm -2 . Ban's result is consistent with the observed junction leakage seen in Figure 4.…”

Section: Device Resultsmentioning

confidence: 95%

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Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Ellis-Monaghan

Lee

Ieong

et al. 2001

31st European Solid-State Device Research Conference

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For high performance deep sub .08um CMOS technologies, minimizing short channel effect (SCE) can result in significant improvements in nominal device performance. We show that with carefully chosen carbon implants in the NFET extension and halo region, superior halo performance is achievable. This "Super Halo" characteristic[1], results in an improvement in SCE and a subsequent improvement in Idsat. The carbon implants are placed to reduce the transient diffusion of the boron halo (TED) while not extending deep enough to become a dominant source of leakage. The net is an improved device characteristic resulting in an equivalent performance gain of 80uA/um at nominal with the same Ioff at minimum for both bulk CMOS and SOI technologies.

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“…Ban et al [2], demonstrated low values of junction leakage below about 5x10 14 cm -2 . Ban's result is consistent with the observed junction leakage seen in Figure 4.…”

Section: Device Resultsmentioning

confidence: 95%

“…al. [2], placed the peak of the carbon implant near the peak of the boron implant in order to act as a sink for the silicon self-interstitials introduced during implantation. This resulted in a dramatic reduction in oxidation-enhanced diffusion with the outdiffusion inversely proportional to the carbon dose.…”

Section: Introductionmentioning

confidence: 99%

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Ellis-Monaghan

Lee

Ieong

et al. 2001

31st European Solid-State Device Research Conference

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“…The same carbon is also implanted to the active areas and the carbon dose required suppressing the NWE to 50 mV or less is much higher than the threshold voltage implant dose (which is BF 2 , 70 keV, 10 13 cm −2 , in this paper). This high carbon dose replaces the boron from the substitutional sites, enables the formation of boron-carbon-silicon interstitial clusters, and reduces the active boron concentration [12]- [14]. Fig.…”

Section: Resultsmentioning

confidence: 98%

Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High- Metal-Gate nMOS Transistors

Mohapatra

Ganeriwala

Sivanaresh

2016

IEEE Trans. Electron Devices

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This paper experimentally shows the reduction of anomalous narrow width effect (NWE) observed in gate-first high-k metal-gate (HKMG) nMOS transistors by using pregate carbon implants. The experiments are performed with different carbon implant doses and energies, in collaboration with a semiconductor foundry. The 28-nm gate-first HKMG CMOS technology is used as the baseline flow. The physical mechanisms responsible for this improvement are identified and explained in detail. It is further shown that the pregate carbon implant used to suppress the NWE also increases junction leakage, improves the device electrostatics, and improves the universal curve.Index Terms-Boron diffusion, device scaling, high-k metal gate (HKMG), junction leakage, metal gate, MOS transistor, narrow width effect (NEW), self-interstitials, universal curve.

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“…That is the reason why the n-MOS transistor with thick gate oxide has the worst Vth mismatch performance. Carbon prevents the boron from being diffused to the Si surface by trapping the interstitial Si through which the boron is diffused because of the thermal budget [4][5][6]. Carbon reacts with the interstitial Si according to the Watkins exchange mechanism [7], and then, the interstitial Si precipitates in the carbon-rich region.…”

Section: Introductionmentioning

confidence: 99%

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment

Mun¹,

Kang²,

Joung³

2013

Journal of information and communication convergence engineerin

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In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage (Vth) adjustment using a carbon implant significantly improves the Vth mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-μm Vth node technology. This paper investigates a carbon implant process as a promising candidate for the optimal Vth roll-off curve. The carbon implant makes the Vth roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

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Suppression of oxidation enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon implanted channels

Cited by 3 publications

References 17 publications

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High- Metal-Gate nMOS Transistors

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment

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Suppression of oxidation enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon implanted channels

Cited by 3 publications

References 17 publications

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High- Metal-Gate nMOS Transistors

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for VthAdjustment

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Product

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About

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment