Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials 2013
DOI: 10.7567/ssdm.2013.ps-3-20
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Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process

M. Oda1,
Toshifumi Irisawa2,
E. Mieda3
et al.
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