Abstract:Strained VO 2 films grown on (001) rutile TiO 2 exhibit an abrupt insulator-to-metal transition (IMT) around room temperature. The transition temperature (T c ) increases when the critical thickness of ∼15 nm is exceeded. The strain relaxation is responsible for crack formation. Here, we show that inserting thin TiO 2 layers suppresses the strain relaxation of VO 2 . We fabricated several VO 2 /TiO 2 /VO 2 trilayer films on (001) TiO 2 substrates. Each film had a VO 2 film of 8 nm, but the TiO 2 thickness was … Show more
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