Suppression of Thermal Damage in InP Substrates in InGaAs Vapor Phase Epitaxy

Yamauchi, Y.; Susa, Nobuhiko

doi:10.1149/1.2127373

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…The decomposition of InP in ambient gases has been investigated for LPE growth conditions (6)(7)(8)(9)(10)(11)(12). The presence of the ambient gases generally alters the decomposition kinetics and hence the decomposition morphology.…”

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Morphological Study of Thermal Decomposition of InP Surfaces

Chu¹,

Jodlauk²,

Johnston³

1983

J. Electrochem. Soc.

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The morphological evolutions of the (100), (111), and (110) normalInP surfaces decomposed at typical VPE and LPE growth temperatures in hydrogen are examined under the microscope using a hot stage. The detailed surface morphology resolved by SEM indicates that the development of the decomposition pits on normalInP surfaces begins with the nucleation of indium droplets of a few thousand angstroms in diameter. The subsequent etching of the normalInP surface in contact with the indium droplet initiates the decomposition pits. The nucleation temperature of indium droplets decreases with increasing hydrogen flow. The evolution of the decomposition pits are recorded on video tape. Detailed growth mechanisms and geometries of the pits on each orientation are described. The effects of misorientation and hydrogen flow rate on the decomposition morphology are discussed. The results suggest that the hydrogen flow over the substrate surface prior to VPE growth should be held to a minimum in order to minimize the thermal decomposition.

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“…The presence of the ambient gases generally alters the decomposition kinetics and hence the decomposition morphology. Various ways for increasing the phosphorus partial pressure (6,9,11,12) have been proposed to suppress the decomposition. However, none of them has been shown to suppress the decomposition completely.…”

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confidence: 99%