Surface Acoustic Wave Resonators Using a Novel ε-Ga<sub>2</sub> O<sub>3</sub> Piezoelectric Film Grown on Sapphire

Tu, Yujia; Chen, Weiqu; Zhang, Zhipeng; Chen, Zimin; Pei, Yanli; Wang, Gang; Lü, Xing

doi:10.1109/led.2023.3269040

Cited by 6 publications

(2 citation statements)

References 35 publications

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“…In addition, it is reported that the piezoelectric constant d 33 of κ-Ga 2 O 3 is twice as large as that of aluminum nitride (AlN), suggesting that κ-Ga 2 O 3 is a great material candidate for application in piezoelectric devices, such as surface acoustic wave resonators. 12,13 Dilute magnetic semiconductors (DMSs) have attracted the attention of the research community for their potential applications in nonvolatile memory, 14 magneto-optic devices, 15 and spintronics devices. 16 Furthermore, multiferroic materials, which possess ferroelectric (or antiferroelectric) properties in combination with ferromagnetic (FM) (or antiferromagnetic (AFM)) properties in the same phase, have attracted considerable research attention due to their promising potential in various applications such as multistate memory elements, magnetic field sensors, and electric field-controlled ferromagnetic resonance devices.…”

Section: ■ Introductionmentioning

confidence: 99%

“…It possesses a spontaneous polarizability of 23–26 μC/cm 2 along the [001] direction, which is larger than the III-nitride semiconductor. , Therefore, a higher concentration of two-dimensional electron gas (2DEG) can be expected in κ-Ga 2 O 3 -based heterostructures for applications in high-mobility and high-frequency electronics. In addition, it is reported that the piezoelectric constant d 33 of κ-Ga 2 O 3 is twice as large as that of aluminum nitride (AlN), suggesting that κ-Ga 2 O 3 is a great material candidate for application in piezoelectric devices, such as surface acoustic wave resonators. , …”

Section: Introductionmentioning

confidence: 99%

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First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

Feng,

Chen,

Liang

et al. 2024

J. Phys. Chem. C

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Dilute magnetic semiconductors (DMSs) have attracted widespread interest due to their potential applications in data storage and spintronics. However, there is no relevant report on the ferromagnetism of κ-Ga 2 O 3 , which is crucial for the spintronics research of the wide-gap semiconductor Ga 2 O 3 . In this report, the ferromagnetism of κ-Ga 2 O 3 with N doping was investigated based on density functional theory. N as a deep acceptor exhibits low defect formation energy in κ-Ga 2 O 3 . The p−p state interaction between N and O atoms results in the ferromagnetic coupling, which is responsible for the transformation of κ-Ga 2 O 3 from nonmagnetic to ferromagnetic. A single N atom with spin-polarized 2p states in the band gap generates a total magnetic moment of 1.0 μ B . The N−N pair interaction length extends up to 4.6 Å. Interestingly, additional hole carriers can enhance the p−p ferromagnetic coupling, which shows a half-metallic ferromagnetic ground state. The stability of the magnetism at room temperature was confirmed via ab initio molecular dynamics simulations. The Curie temperature exceeds room temperature and rises with increasing hole carrier density. This study will provide an important foundation for the application of Ga 2 O 3 in the spintronics field.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

Feng,

Chen,

Liang

et al. 2024

J. Phys. Chem. C

Self Cite

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Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

Chen,

Chen

et al. 2024

Journal of Alloys and Compounds

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Theoretical analysis of bulk acoustic wave resonators with emerging ε -Ga2O3 piezoelectric film

Zhang,

Yang,

Liu

et al. 2024

Applied Physics Letters

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In this paper, the theoretical analysis of 2.3 GHz bulk acoustic wave (BAW) resonators with emerging ε-Ga2O3 piezoelectric films was investigated. By using the finite element method to calculate the dispersion curve of the BAW resonator based on ε-Ga2O3, we designed and optimized the Bragg reflector structure as well as the metal frame to suppress transverse energy leakage. When the width of the raised metal frame is an odd multiple of the quarter wavelength of the S1 Lamb mode, the vibration displacement at the boundary of the resonators is significantly suppressed, and the acoustic energy is concentrated as much as possible in the effective area of the resonators, resulting in improvement of the Qp and Qmax. Therefore, the ε-Ga2O3 based BAW resonators with Bode Qmax (∼1488), electromechanical coupling coefficient k2eff (∼15%), and the figure of merit (FoM) coefficient (∼223) are simulated and designed. Detailed theoretical analysis provides the key theoretical guidance and design scheme for the realization of ε-Ga2O3 BAW filters. The above-mentioned results imply that the emerging ε-Ga2O3 piezoelectric semiconductors have application prospects in BAW resonators and radio frequency front-end fields.

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Surface Acoustic Wave Resonators Using a Novel ε-Ga₂ O₃ Piezoelectric Film Grown on Sapphire

Cited by 6 publications

References 35 publications

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

Theoretical analysis of bulk acoustic wave resonators with emerging ε -Ga2O3 piezoelectric film

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Surface Acoustic Wave Resonators Using a Novel ε-Ga2 O3 Piezoelectric Film Grown on Sapphire

Cited by 6 publications

References 35 publications

First-Principles Prediction of κ-Ga2O3:N Ferromagnetism

First-Principles Prediction of κ-Ga2O3:N Ferromagnetism

Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

Theoretical analysis of bulk acoustic wave resonators with emerging ε -Ga2O3 piezoelectric film

Contact Info

Product

Resources

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Surface Acoustic Wave Resonators Using a Novel ε-Ga₂ O₃ Piezoelectric Film Grown on Sapphire

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism