Surface-activated-bonding-based InGaP-on-Si double-junction cells

Shigekawa, Naoteru; Morimoto, M.; Nishida, Shota; Liang, Jianbo

doi:10.7567/jjap.53.04er05

Cited by 30 publications

(22 citation statements)

References 30 publications

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“…In conclusion, Al0.2Ga0.8As//Si tandem solar cells has been demonstrated using SAB showing improved efficiency compared to its AlGaAs and Si stand-alone counterparts. A power conversion efficiency of 17% under one-sun AM1.5G spectrum was measured, which is higher than the present record for a wafer-bonded 2J III-V on Si solar cell [8]. Moreover, this performance level can be further improved by solving the following issues: a) non-optimum ARC, b) Si and AlGaAs material quality, c) front contact processing and inverted growth difficulties and d) over-thick GaAs bonding layer.…”

Section: Discussionmentioning

confidence: 59%

“…Therefore, a 2J III-V on Si solar cell has the potential to reach very high efficiencies and it could be more cost competitive compared to the 3J-MJSC due to the high cost of III-V additional epitaxial layers needed [7]. To our knowledge, the best efficiency reported so far for a wafer-bonded 2J III-V on Si solar cell under AM1.5G standard spectrum is 11.1% achieved by Shigekawa et al with a GaInP//Si cell structure [8].…”

Section: Introductionmentioning

confidence: 99%

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Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

Veinberg‐Vidal

Vauche

Weick

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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Monolithic two-terminal III-V on Si dual-junction (2J) solar cells were fabricated by means of Surface-Activated direct wafer Bonding (SAB). Al0.2Ga0.8As single-junction cells are grown on GaAs substrate by Metal-Organic Vapor Phase Epitaxy (MOVPE) and bonded at room temperature to independently fabricated Si solar cells. The n + -GaAs//n + -Si bonding interface is characterized by Transmission Electron Microscopy (TEM) revealing a 2-3 nm thick amorphous interlayer. The performance of the 1 cm² tandem cells, designed for low concentration applications, was studied by External Quantum Efficiency (EQE)and J-V measurements showing a power conversion efficiency of 17% under one-sun AM1.5G spectrum. To our knowledge, this is the highest efficiency ever reported for a wafer-bonded 2J III-V on Si solar cell. Limitations to performance have been identified and therefore higher efficiencies are expected.

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Section: Discussionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

Veinberg‐Vidal

Vauche

Weick

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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“…Regarding the methods to construct III–V-on-Si architectures, a variety of studies have been reported. One of the most straightforward approaches would be the heteroepitaxial growth of GaAs-relevant materials on c-Si substrates; , however, despite the progress of elaborative buffer layer techniques to compensate for the difference in lattice constants and thermal expansion coefficients between GaAs and Si, the layer quality achieved with this type of approach remains a challenge. ,− Alternatively, bonding-based approaches have gained increasing attention, − and as previously mentioned, impressive results have already been obtained by mechanically stacked four-terminal tandems and surface-activation-bonded two-terminal tandems. , We have also developed a unique semiconductor bonding strategy, termed smart stack. − Using well-organized Pd nanoparticle (NP) arrays as bonding mediators, series-connected two-terminal tandem cells consisting of III–V and c-Si subcells have been successfully fabricated with the best efficiency of 30.8% . To make the smart stack technique more attractive, however, it would be preferable to find alternative materials for costly Pd, whose price has recently been rising due to the increasing demand of many other industrial applications…”

Section: Introductionmentioning

confidence: 99%

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

Mizuno

Makita

Mochizuki

et al. 2020

ACS Appl. Energy Mater.

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The integration of III−V materials with crystalline Si (c-Si) is a promising pathway to design high-performance optoelectronic devices, including solar cells. We have previously reported high-efficiency III−V/Si tandem cells using our unique semiconductor bonding technique, termed smart stack. In the conventional smart stack cells, Pd nanoparticle (NP) arrays have been commonly employed as bonding mediators between III−V and c-Si; however, from an economical point of view, the use of other low-cost metals would be preferable. Therefore, this study focused on the possibility of Cu. A polystyrene-block-poly-2-vinylpyridine (PS-b-P2VP)-based block copolymer was utilized to prepare Cu NP arrays. Desired Cu NP arrays were achieved by starting with self-assembled PS-b-P2VP micelles preloaded with Cu 2+ ions. Satisfying bonding properties (low-resistance interfaces) were confirmed when GaAs subcells were stacked on the Cu NP arrays formed on native-oxide-removed c-Si subcells. Conversion efficiencies of up to 25.9% have been demonstrated with triple-junction structures consisting of InGaP/GaAs top and c-Si bottom subcells. The long-term reliability of Cu NP array-mediated smart stack cells was also verified by the thermal cycle and damp heat tests. Hence, we have successfully confirmed that not only Pd but also Cu is available to realize high-efficiency smart stack cells.

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“…[19][20][21] To overcome these issues, roomtemperature wafer-bonding techniques without high-temperature annealing have been applied for fabricating Si-based multi-junction solar cells such as AlGaAs ∥ Si, InGaP= GaAs ∥ Si, and InGaP ∥ Si solar cells. [22][23][24] Although Si solar cells have advantages such as low production costs and environmental loads, it is difficult to control band-gap energies on the basis of a specific current-matching condition to achieve higher efficiency. On the other hand, compound semiconductor solar cells do not have this disadvantage.…”

Section: Introductionmentioning

confidence: 99%

III–V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique

Arimochi

Watanabe

Yoshida

et al. 2015

Jpn. J. Appl. Phys.

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We have developed III-V compound semiconductor multi-junction solar cells by a room-temperature wafer-bonding technique to avoid the formation of dislocations and voids due to lattice mismatch and thermal damage during a conventional high-temperature wafer-bonding process. First, we separately grew an (Al)GaAs top cell on a GaAs substrate and an InGaAs bottom cell on an InP substrate by metal solid source molecular beam epitaxy. Thereafter, we successfully bonded these sub-cells by the room-temperature wafer-bonding technique and fabricated (Al)GaAs k InGaAs wafer-bonded solar cells. To the best of our knowledge, the obtained GaAs k InGaAs and AlGaAs k InGaAs wafer-bonded solar cells exhibited the lowest electrical and optical losses ever reported. The AlGaAs k InGaAs solar cells reached the maximum efficiency of 27.7% at 120 suns. These results suggest that the room-temperature wafer-bonding technique has high potential for achieving higher conversion efficiencies.

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Surface-activated-bonding-based InGaP-on-Si double-junction cells

Cited by 30 publications

References 30 publications

Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

III–V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique

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