Surface analysis and electrical measurement of the ohmic contact on p-CdZnTe (111)B face with Au/Cd composite electrode

Ling, Liwen; Zhang, Jijun; Zhao, Shutao; Zhang, De‐Long; Zhang, Jiaxuan; Shi, Haozhi; Tang, Ke; Liang, Xiaoyan; Huang, Jian; Min, Jiahua; Wang, Linjun

doi:10.1016/j.mssp.2019.03.029

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…In 2019, Ling et al [145] conducted a study on the impact of Au/Cd composite electrodes on the conductivity of CZT crystals. The results indicated that the direct deposition of Au electrodes on the crystal surface caused lattice damage to the CZT, forming an amorphous layer, which was unfavorable for ohmic contact formation.…”

Section: Czt Crystal Contact Electrodementioning

confidence: 99%

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2024

Sensors

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CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors and summarizes existing research to offer valuable insights for envisioning new detector methodologies.

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Section: Czt Crystal Contact Electrodementioning

confidence: 99%

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2024

Sensors

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“…Yang et al [13] found that evaporating Au-Zn composite electrodes on the (111) surface of CdZnTe crystal can effectively avoid the formation of an oxide layer. Ling et al [14] indicated that the Au-Cd composite electrode evaporated on p-CdZnTe (111) plane can obtain better ohmic contact performance with a lower barrier height than the Au-Zn electrode. The adhesion between metal electrode and CdZnTe crystal is important for the detector fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Rapid Annealing of Ti-Au Composite Electrode on n-Type (111) CdZnTe Crystals

et al. 2020

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In this paper, the ohmic properties of Ti, Al, and Ti-Au composite electrodes on n-type (111) CdZnTe crystal deposited by vacuum evaporation method were first analyzed, and then the rapid annealing of Ti-Au electrode under Ar atmosphere with different temperature and time was explored. The ohmic property and barrier height were evaluated by current–voltage (I–V) and capacitance-voltage (C–V) measurements, and the adhesion strength of various electrodess to CdZnTe was compared. The Ti-Au electrode on CdZnTe showed the lowest leakage current and barrier height, and the highest adhesion strength among the three kinds of electrodes on (111) CdZnTe crystals. The rapid annealing of Ti-Au electrode under Ar atmosphere was proved to improve its ohmic property and adhesion strength, and the optimal annealing temperature and time were found to be 423 K and 6 min, respectively. The barrier height of the Ti-Au/CdZnTe electrode is 0.801 eV through rapid annealing for 6 min at 423 K annealing temperature, and the adhesion is 1225 MPa, which increases by 50% compared with that without rapid annealing.

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