“…Argon cluster-ion sources were originally developed for semiconductor processing, [1][2][3] and advanced coatings, 4 surface modification and cleaning, 3,5 and the use of these sources for analytical applications was pioneered in SIMS. 6,7 They are equally useful in XPS, 8,9 where for example sputter depth profiling of organic materials, 10 such as semiconductors 11 can give access to defect and band bending measurements at interfaces, heritage materials can be analysed after removal of organic films, 12 and many applications can be found in the field of inorganic analysis. 13,14 There is still an absence of sputter yield reference data, made worse by the fact that unlike monatomic sputter profiling, cluster ions used in XPS or SIMS are typically in a regime where the energy of each atom in the cluster is close to the monatomic sputter threshold, 15 making sputter yield rather more complex.…”