Surface and domain structures of ferroelectric crystals studied with scanning force microscopy

Abstract

The understanding of the phenomena of ferroelectricity requires profound knowledge of the ferroelectric domain structure. In this paper we report on the progress of studying ferroelectric domains and domain walls with scanning force microscopy (SFM). Domains and domain walls of ferroelectric crystals of guanidinium aluminum sulfate hexahydrate (GASH) are imaged with SFM. Two sets of complementary results are obtained depending on the operation mode of the instrument. In the non-contact imaging mode (attractive force regime), domain walls are imaged. In the contact imaging mode (repulsive force regime) in addition to the domain wall structure, information about the polarity of the domains is obtained. In these latter images, the opposing contrast of the ferroelectric positive and negative domains is superimposed on the GASH cleavage structure. The imaging mechanism of the contact and noncontact modes are discussed. Corroborating scanning electron microscopy images are presented as well.

Nanoscale imaging of domain dynamics and retention in ferroelectric thin films

“…The recent progress in using SFM as an effective tool for high-resolution visualization of a domain structure in ferroelectric thin films provides the appropriate background for this letter. [3][4][5][6] In a typical retention experiment, a capacitor is written into a polarization state and left in that state for fixed periods of time, after which the polarization remaining in the capacitor is measured, as illustrated, for example, in Fig. 1͑a͒.…”

Nanoscale investigation of fatigue effects in Pb(Zr,Ti)O3 films

“…Recently, it has been demonstrated that scanning force microscopy ͑SFM͒ is a useful technique for investigation of ferroelectric materials, providing high-resolution visualization of ferroelectric domains. [2][3][4][5][6] In the present letter we use SFM to perform a study of domain structures and switching behavior of PZT ferroelectric thin films integrated into heterostructures with different electrodes, which yield different fatigue characteristics.…”

A Study of the Ferroelectric Properties of PbZr0.4Ti0.6O3(PZT) Grains Using Kelvin Force Microscopy Analysis

“…One possible approach is to utilize scanning probe microscopy (SPM) technology because it can easily access nano scaled devices. Thus, recently, SPM has been widely employed for various applications either by the measurement of electrical properties [1] or by the monitoring of the physical properties [2,3]. In particular, in ferroelectric related fields, various techniques based on SPM technology have been developed for the to analysis of ferroelectric films as well as devices.…”