Surface and grain boundary diffusion

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

“…Assuming that  ~ (0.6-0.7)T M , (T M = bulk melting point) [37], one finds for the silica particles (with T M = 2000 K), that (Silica) ≂ 1200 K, while for the silicon substrate (with T M = 1683 K), that (Silicon) ≂ 1000 K, respectively. As mentioned in the Experimental section, the Ar + beam power density is several orders of magnitude lower than that was for Ga + ion irradiation, so that heating by the Ar + beam cannot reach the temperature of 2D melting.…”