Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries

Barmak, K.; Darbal, Amith; Ganesh, K. J.; Ferreira, Paulo J.; Rickman, J. M.; Sun, Tik; Yao, Bo; Warren, Andrew P.; Coffey, Kevin R.

doi:10.1116/1.4894453

Cited by 77 publications

(45 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4,24 With twin boundaries included in the determination of grain size as mean-intercept length, the resistivity data are well described by p and R parameters that are within experimental error equal to those previously reported in Ref. 1. Furthermore, it is shown that exclusion of the twin boundaries results in a worse fit to the experimental resistivity data.…”

Section: Introductionsupporting

confidence: 50%

“…1 The values of p and R were varied in steps of 0.01 from 0.01 to 0.99 and the errors, E ¼ q experiment i À q model i , were calculated for each of the experimental resistivity results over the full grid of p and R. The error values for the minimum SSE were used to determine the BIC using Eq. (5).…”

Section: Discussionmentioning

confidence: 99%

“…4 The independent and coupled errors in p and R in the FS þ MS model were determined via the bootstrap resampling method of statistical analysis using 10 000 re-samplings on the n squared error values to obtain the SSE at the 95% confidence level. 1 Briefly, in one resampling step employing this method, a new set of n squared error values was selected randomly, one at a time, from the original set and a new SSE is calculated using this new set. The resampling was repeated 10 000 times and the distribution of SSEs was plotted, and the SSE at the 95th percentile was employed to determine the errors on p and R. 1 Table III lists the thicknesses of the Cu layers, the roughness of the upper and lower interfaces with the Ta 38 Si 14 N 48 encapsulation layers, and the area percent of voids in the films.…”

Section: Discussionmentioning

confidence: 99%

“…In addition for measuring the grain size of the Ta 38 Si 14 N 48 encapsulated films, the CDF method was used to obtain the grain size for a SiO 2 encapsulated sample obtained from the same deposited film for which the grain size had been measured by HCDF and reported in the resistivity study of Sun et al 4 This was done to ensure that grain sizes measured by the different techniques (imaging and mapping) could be considered as equal within experimental error, thereby allowing the current study to be directly compared with those of Sun et al 4 and Barmak et al 1 for SiO 2 and Ta/SiO 2 encapsulated Cu films.…”

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

“…Due to the difficulty of characterizing twin boundaries in Cu at the nanoscale, this contribution was ignored in these earlier studies. The later study of Barmak et al 1 made use of advances in crystal orientation mapping in the transmission electron microscope that allowed quantification of the twin boundary content. They then re-analyzed the resistivity data of Sun et al 4 using the mean linear intercept, including twin boundaries, as the measure of grain size and showed that the conclusions of Sun et al 4 held, but with model parameters of surface specularity p ¼ 0.48 and grain boundary reflection coefficient R ¼ 0.26 compared with p ¼ 0.55 and R ¼ 0.43 when twin boundaries were excluded.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

On twin density and resistivity of nanometric Cu thin films

Barmak

Darbal

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Crystal orientation mapping in the transmission electron microscope was used to quantify the twin boundary length fraction per unit area for five Ta38Si14N48/SiO2 encapsulated Cu films with thicknesses in the range of 26–111 nm. The length fraction was found to be higher for a given twin-excluded grain size for these films compared with previously investigated SiO2 and Ta/SiO2 encapsulated films. The quantification of the twin length fraction per unit area allowed the contribution of the twin boundaries to the size effect resistivity to be assessed. It is shown that the increased resistivity of the Ta38Si14N48 encapsulated Cu films compared with the SiO2 and Ta/SiO2 encapsulated films is not a result of increased surface scattering, but it is a result of the increase in the density of twin boundaries. With twin boundaries included in the determination of grain size as a mean-intercept length, the resistivity data are well described by 2-parameter Matthiessen's rule summation of the Fuchs-Sondheimer and Mayadas Shatzkes models, with p and R parameters that are within experimental error equal to those in prior reports and are p = 0.48(+0.33/−0.31) and R = 0.27 ± 0.03.

show abstract

Section: Introductionsupporting

confidence: 50%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

On twin density and resistivity of nanometric Cu thin films

Barmak

Darbal

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

Perez

Jog

Kwon

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. In this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m −1 K −1 for 25.5-133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron-phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron-phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

show abstract

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

View full text Add to dashboard Cite

Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

show abstract

Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries

Abstract: Articles you may be interested inSize effects in thin gold films: Discrimination between electron-surface and electron-grain boundary scattering by measuring the Hall effect at 4K

Cited by 77 publications

References 38 publications

On twin density and resistivity of nanometric Cu thin films

On twin density and resistivity of nanometric Cu thin films

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Contact Info

Product

Resources

About