Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Şuat

doi:10.1007/s00339-016-0262-x

Cited by 10 publications

(4 citation statements)

References 21 publications

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“…The N values of the TCO films at 200 • C obtained using Equation ( 3) are given in Table 2. It was observed that the N value of the multilayer TCO-II_200 • C film decreased and there was a positive correlation with the crystal size of the film [64]. The highest N value was observed in the single-layer TCO-III_200 • C film, followed by the multilayer TCO-IV_200 • C and single-layer TCO-I_200 • C films, respectively.…”

Section: Structural and Morphological Propertiesmentioning

confidence: 93%

Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering

Seyhan,

Kartal

2023

Coatings

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In this study, we investigated the potential of multilayer TCO structures, specifically those made up of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), for crystalline silicon heterojunction solar cells (SHJ). We used the radiofrequency (RF) magnetron sputtering method to deposit various thin-film structures under various deposition temperatures and evaluated their electrical, optical, and morphological properties. The objective was to obtain films with lower sheet resistances and higher transmittances than those of single-layer thin films. Our results show that the ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C achieves the best sheet resistance of 18.5 Ohm/sq and a high optical transmittance of over 90% at a 550 nm wavelength. This indicates that multilayer TCO structures have the potential to be more optically and electrically efficient, and that they can improve the performance of optoelectronic devices. Finally, a power conversion efficiency of 17.46% was obtained for a silicon heterojunction (SHJ) solar cell fabricated using an ITO/IZO/ITO/IZO/ITO multilayer film structure deposited at 200 °C as a front TCO. Our study provides valuable insights into the field of TCOs and offers a promising avenue for future research.

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Section: Structural and Morphological Propertiesmentioning

confidence: 93%

Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering

Seyhan,

Kartal

2023

Coatings

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“…The dielectric constant of ITO is written as follows: 27 – 29 εm(λ)=3.8−λ2λcλp2(λc+iλ),where λp=0.56497 and λc=11.21076 μm.…”

Section: Theorymentioning

confidence: 99%

“…The dielectric constant of ITO is written as follows: [27][28][29] E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 3 ; 1 1 6 ; 3 9 5…”

Section: Dispersion Relationmentioning

confidence: 99%

Highly sensitive self-referenced surface plasmon resonance fiber optic sensor with indium tin oxide/metal/dielectric structure

Zhang

Lin

2023

Opt. Eng.

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A highly sensitive self-referenced surface plasmon resonance (SPR) fiber optic sensor with an indium tin oxide (ITO)/metal/dielectric structure is proposed and theoretically analyzed using the transfer matrix method-based numerical simulations. First, the thicknesses of the metal and ITO films are optimized to realize self-referenced sensing with low normalized transmission power at the resonance peak. Then, a thickness-optimized dielectric (TiO 2 ) film is employed on top of the metal film to improve the sensitivity of the proposed self-referenced sensor. In addition, a comparison between the traditional self-referenced sensor and the proposed self-referenced sensor with the dielectric film are carried out. The self-referenced sensor with a 36 nm ITO/37 nm Ag/70 nm TiO 2 structure obtains up to 14510 nm/RIU in sensing sensitivity when the refractive index of the analyte varies from 1.33 to 1.37, which is improved by 421% compared with the traditional one without the dielectric. At the same time, the shift of the self-referenced resonance wavelength changes little for the proposed structure. The proposed ITO/metal/dielectric structurebased fiber optic sensor exhibits highly sensitively self-referenced sensing performance in the near infrared band, which can promote its application in the field of biosensors.

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“…The main disadvantages of the wet methods [21] lie in their incompatibility with device processing techniques, and limited flexibility in substrate choice, the inability to control growth of the films, and their limited capabilities for large-scale production. Physical processes such as reactive RF sputtering technique overcome these limitations and offer many advantages such as process reliability, production of high quality and uniform thin films with the desired chemical composition at industrial scale [22] and has a very high level of reproducibility unlike to the others mentioned methods. In addition, reactive sputtering allows to easily control the stoichiometry of the oxides and to deposit multi-layers of different compositions that can be tailored for specific applications (i.e., selective absorbers for solar applications).…”

Section: Introductionmentioning

confidence: 99%

Evolution of the structural, morphological, optical and electrical properties of reactively RF-sputtered cobalt oxide thin films with oxygen pressure

Aakib

Pierson

Chaik

et al. 2019

Vacuum

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Cobalt oxide thin films were deposited on glass and silicon substrates using reactive cathodic radio-frequency sputtering from a pure cobalt target in oxygen/argon gas mixtures with different percentages of oxygen (10, 30, 40 and 50 %). The X-ray diffractograms showed that deposited thin films crystallized in a cubic Co 3 O 4 phase. The crystallite size was found to vary with the oxygen pressure, reaching a maximum using 40 % of O 2 . Scanning electron microscopy (SEM), AFM, energy dispersive X-ray spectroscopy and Raman scattering analyses confirmed the formation of Co 3 O 4 films with nano-sized particles. In addition, it is found that the optical band gap of the films increased with increasing oxygen pressure in the sputtering atmosphere. Finally, the electrical resistivity of the sputtered thin films was shown to increase with oxygen-percentage.

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Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

Cited by 10 publications

References 21 publications

Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering

Optical, Electrical and Structural Properties of ITO/IZO and IZO/ITO Multilayer Transparent Conductive Oxide Films Deposited via Radiofrequency Magnetron Sputtering

Highly sensitive self-referenced surface plasmon resonance fiber optic sensor with indium tin oxide/metal/dielectric structure

Evolution of the structural, morphological, optical and electrical properties of reactively RF-sputtered cobalt oxide thin films with oxygen pressure

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