2013
DOI: 10.1002/pssa.201228767
|View full text |Cite
|
Sign up to set email alerts
|

Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

Abstract: This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space–time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient (α) and SEE coefficient (γ) were performed in high‐ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300–10 000 Td). The direct calculations of γ were carried o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2015
2015
2016
2016

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
references
References 61 publications
0
0
0
Order By: Relevance