Surface characterisation of plasma-nitrided titanium: an XPS study

Bertóti, I.; Mohai, M.; Sullivan, J.L.; Saied, S.O.

doi:10.1016/0169-4332(94)00545-1

Cited by 298 publications

(143 citation statements)

References 42 publications

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“…As shown in Fig. 3(b) and (c), the O 1s peak was deconvoluted into four peaks, which were determined to correspond to the oxygen and/or hydroxyl group on the surface in the Cl 2 /Ar plasma and the pure The confirmation of this is that the intensity of the peak centered at 530.2 eV was constant and was not dependent on the film treatment conditions [13,14]. As shown in Fig.…”

Section: Resultsmentioning

confidence: 65%

“…These peaks were shifted toward a low binding energy and the maximum deviation was about Δ 0.3 eV when the TiO 2 thin films were exposed in Cl 2 /Ar plasma. This chemical shift indicates that Ti chemically reacted with Cl radical at the surface [13][14][15]. The intensity of this peak increases slightly with the Cl 2 /Ar (75%:25%) plasma, as shown in Fig 3(b), this changes of intensity can be related to the signal from the Ti-O x bond, which was deconvoluted as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The maximum etch rate of the TiO 2 thin film was 136 nm/min, at a Cl 2 /(C1 2 +Ar) ratio of 75%. The comparisons on etch rates of the TiO 2 thin film in Cl 2 -based plasma shows that chemical etching is more effective than physical sputtering [13] TiO 2 thin film etching in chlorinebased plasma is well known to produce highly volatile by-products such as Ti-Cl 4 . The evident enhancement on etch rate of the TiO 2 thin film in the pure Cl 2 plasmas suggests that the chemical etch pathways provided by the Cl-atoms are the dominant mechanism for the given set of input process parameters.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Woo¹,

Joo²,

Kim³

2015

Transactions on Electrical and Electronic Materials

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In this study, we carried out an investigation of the etch characteristics of TiO 2 thin films and the selectivity of TiO 2 to SiO 2 in adaptive coupled C1 2 /Ar plasma. The maximum etch rate of the TiO 2 thin film was 136±5 nm/min at a gas mixing ratio of C1 2 /Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

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Section: Resultsmentioning

confidence: 65%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Woo¹,

Joo²,

Kim³

2015

Transactions on Electrical and Electronic Materials

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“…N 2 plasmas have been frequently used for the surface nitridation of metals and oxides for various applications [1,2]. For the case of TiO 2 , N 2 plasma can be used to make oxynitride layers within the TiO 2 matrix for enhanced visible light absorption and subsequent enhancement in photocatalytic activity [2].…”

Section: Introductionmentioning

confidence: 99%

Densities of Active species in N₂/H₂ RF and HF afterglows: application to surface nitriding of TiO₂ nanocrystals

Ricard

Sarrette

Wang

et al. 2017

Eur. Phys. J. Appl. Phys.

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Abstract. N 2 /0-5% H 2 flowing afterglows from Radio Frequency (RF) and High Frequency (HF) sources have been analyzed by optical emission spectroscopy. In similar conditions (pressure 5-6 Torr, flow rate 0.5 slm and power 100 W), it is found in pure N 2 a nearly constant N-atom density from the pink to the late afterglow, which is higher in HF than in RF: (1-2) and 0.4 Â 10 15 cm À3 , respectively. With a N 2 /2% H 2 gas mixture, the early afterglows is changed to a late afterglow with about the same N-atom density for both RF and HF cases: (8-9) Â 10 14 cm À3 . Anatase TiO 2 nanocrystals and Atomic Layer Deposition-grown films were exposed to the RF afterglows at room temperature. XPS analysis of the samples has shown that the highest N/Ti ratio of 0.24 can be achieved with the pure N 2 late afterglow. In the HF pure N 2 late afterglow, however, the N/Ti coverage was limited to 0.04 in spite of higher N-atom density. Such differences in the N content between the two RF and HF cases are attributed to the presence of a high O-atom impurity of 2 Â 10 13 cm À3 in HF as compared to that (8 Â 10 11 cm À3 ) in RF.

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“…31 Surface modification of titanium nitride is affected by its outermost surface, which is a mixture of titanium dioxide and titanium oxynitride. 1,[31][32][33][34] It was suggested that covalent bonding and self-assembly of phosphonate molecules onto the surface of titanium oxide is possible due to surface OH group regeneration via proton transfer from the phosphonic group to the surface oxygen. 35 However, in the case of titanium nitride surface, OH group regeneration only occurs when there is an oxygen atom close to the phosphonic hydrogen, whereas no such regeneration is possible if the next neighbor is nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

2014

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The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxynitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were $1.5 and $1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 6 70 ng/cm 2

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Surface characterisation of plasma-nitrided titanium: an XPS study

Cited by 298 publications

References 42 publications

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Densities of Active species in N₂/H₂ RF and HF afterglows: application to surface nitriding of TiO₂ nanocrystals

Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

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Surface characterisation of plasma-nitrided titanium: an XPS study

Cited by 298 publications

References 42 publications

Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma

Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma

Densities of Active species in N2/H2 RF and HF afterglows: application to surface nitriding of TiO2 nanocrystals

Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

Contact Info

Product

Resources

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Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Densities of Active species in N₂/H₂ RF and HF afterglows: application to surface nitriding of TiO₂ nanocrystals