Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

Abstract

Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

“…Further, there are many reports in the literature which hinting that indium (In) has a tendency of forming metallic cluster (or segregation) inside the material. This has a detrimental effect to the device performance of In-based semiconductors [23][24][25][26][27][28]. Further ZnSnP 2 which has a experimental E g of ≈ 1.7 eV shows a order-disorder phase transition at high temperature which reduce the E g to 0.75 eV [29].…”