Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

Langereis, E Erik; Keijmel, J Jeroen; Sanden, van de Mcm Richard; Kessels, Wmm Erwin

doi:10.1063/1.2940598

Cited by 125 publications

(155 citation statements)

References 22 publications

Supporting

Mentioning

134

Contrasting

Order By: Relevance

“…Note that the presence of a significant density of CO x groups in the bulk of the material would also not be expected for ALD with H 2 O as the oxidant, in contrast to plasma ALD where C-O vibrations were detected by infrared absorption spectroscopy. 33,37,42 On the other hand, it is likely that the CH x feature at 740 C can be attributed to the removal of carbon impurities that originate from the precursor and were incorporated into the Al 2 O 3 :Er film during deposition. Maxima in the effusion transients were observed at 700 C for both H 2 O and H 2 .…”

Section: Effect Of Annealing On Structural Propertiesmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

show abstract

Section: Effect Of Annealing On Structural Propertiesmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The formation of these volatile species indicates the incorporation of CO x impurities into the Al 2 O 3 bulk by remote plasma ALD. 17 Effusion peaks also appear in the transients at 660°C for H 2 O and H 2 ͑with the H 2 signal probably mainly originating from H 2 O͒, at 850°C for H 2 O, and at 890°C for H 2 . In addition, a small H 2 feature is observed in the spectrum at 510°C, which could possibly originate from cracking C x H y species that were detected through mass 15 and 29.…”

mentioning

confidence: 99%

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

Dingemans

Engelhart²,

Seguin³

et al. 2009

Journal of Applied Physics

Self Cite

149

View full text Add to dashboard Cite

The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff<3 cm/s were obtained and the passivation proved sufficiently stable (Seff<14 cm/s) against a high temperature “firing” process (>800 °C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

show abstract

“…Basically, the study 38 shows at lower deposition temperature (25°C), the number of hydroxyl groups on the surface created by O2 plasma increased compared to depositions at 100° and 150°C.…”

Section: Roughness (M)mentioning

confidence: 90%

“…The surface chemistry of plasma assisted Al2O3 ALD using infrared spectroscopy on pure Al2O3 films shows dependency of the surface groups to the deposition temperature 38 .…”

Section: Roughness (M)mentioning

confidence: 99%

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films

Mirvakili

Bui

Ommen

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

 ABSTRACTSurface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, while on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates, have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability.

show abstract

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

Cited by 125 publications

References 22 publications

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films

Contact Info

Product

Resources

About

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

Cited by 125 publications

References 22 publications

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films

Contact Info

Product

Resources

About

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al₂O₃ Thin Films