Atomic layer deposition (ALD) of
alumina using trimethylaluminum (TMA) has technological importance
in microelectronics. This process has demonstrated a high potential
in applications of protective coatings on Cu surfaces for control
of diffusion of Cu in Cu2S films in photovoltaic devices
and sintering of Cu-based nanoparticles in liquid phase hydrogenation
reactions. With this motivation in mind, the reaction between TMA
and oxygen was investigated on Cu(111) and Cu2O/Cu(111)
surfaces. TMA did not adsorb on the Cu(111) surface, a result consistent
with density functional theory (DFT) calculations predicting that
TMA adsorption and decomposition are thermodynamically unfavorable
on pure Cu(111). On the other hand, TMA readily adsorbed on the Cu2O/Cu(111) surface at 473 K resulting in the reduction of some
surface Cu1+ to metallic copper (Cu0) and the
formation of a copper aluminate, most likely CuAlO2. The
reaction is limited by the amount of surface oxygen. After the first
TMA half-cycle on Cu2O/Cu(111), two-dimensional (2D) islands
of the aluminate were observed on the surface by scanning tunneling
microscopy (STM). According to DFT calculations, TMA decomposed completely
on Cu2O/Cu(111). High-resolution electron energy loss spectroscopy
(HREELS) was used to distinguish between tetrahedrally (Altet) and octahedrally (Aloct) coordinated Al3+ in surface adlayers. TMA dosing produced an aluminum oxide film,
which contained more octahedrally coordinated Al3+ (Altet/Aloct HREELS peak area ratio ≈ 0.3) than
did dosing O2 (Altet/Aloct HREELS
peak area ratio ≈ 0.5). After the first ALD cycle, TMA reacted
with both Cu2O and aluminum oxide surfaces in the absence
of hydroxyl groups until film closure by the fourth ALD cycle. Then,
TMA continued to react with surface Al–O, forming stoichiometric
Al2O3. O2 half-cycles at 623 K were
more effective for carbon removal than O2 half-cycles at
473 K or water half-cycles at 623 K. The growth rate was approximately
3–4 Å/cycle for TMA+O2 ALD (O2 half-cycles
at 623 K). No preferential growth of Al2O3 on
the steps of Cu(111) was observed. According to STM, Al2O3 grows homogeneously on Cu(111) terraces.