Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas

Meyer, Thibaut; Girard, Aurélie; Dain, Guillaume Le; Rhallabi, A.; Baudet, Émeline; Nazabal, Virginie; Němec, Petr; Cardinaud, Christophe

doi:10.1016/j.apsusc.2021.149192

Cited by 7 publications

(5 citation statements)

References 50 publications

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“…The carbon present may be attributed to adventitious carbon, a common XPS contaminant; however, in this case it is likely that at least some portion of this carbon may be the result of fluoropolymer deposition during the etching process, as seen by the fluorine present. [ 68 ]…”

Section: Resultsmentioning

confidence: 99%

The Antibacterial Activity of Hierarchical Patterns of Nanostructured Silicon Fabricated Using Block Copolymer Micelle Lithography

McFadden,

Reid,

Podhorska

et al. 2024

Adv Eng Mater

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We report on the fabrication of four different nanostructured silicon surfaces by using a combination of block copolymer micelle lithography. Nanoparticle hard masks were evaluated for their ability to produce single height nanoneedle arrays. Low‐density (3 features μm‐2 and high‐density (201 features μm‐2) single‐height arrays were produced from Au or α‐Fe2O3 masks respectively. These single‐height arrays were then used as substrates to produce nanostructured surfaces with two distinct nanoneedle arrays concerning height, diameter and density. These dual‐height arrays had feature densities of 31 and 9 features μm‐2. All surface types were then tested for their antibacterial activity against Gram‐negative bacteria, Pseudomonas fluorescens over 24 hours. No difference in surface coverage of P. fluorescens when comparing the structured silicon surface types to planar controls was observed. However, all of the structured silicon types showed an increase in dead cell surface coverage ranging from 9 – 29% compared to planar controls. Density of the pillars appeared to be more important than the difference in height of pillars when it came to antibacterial activity. This work seeks to add to the literature by investigating the effects of feature density, as well as the impact of a dual‐height arrangement of nanoneedles against P. fluorescens.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

The Antibacterial Activity of Hierarchical Patterns of Nanostructured Silicon Fabricated Using Block Copolymer Micelle Lithography

McFadden,

Reid,

Podhorska

et al. 2024

Adv Eng Mater

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“…24 Often, the Ar flow for the SiC etching is kept 2 orders of magnitude larger than that of SF 6 , and the oxygen flow is about 10 sccm. 27,35 The only process parameter that we kept constant in all tests was the SF 6 flow (6 sccm). Noteworthy, the depth uniformity percentage between the center and edge of the same wafer or different wafers was statistically determined using the following well-known equation where the lower depth uniformity % value stands for the better trench uniformity Experiment 1 produced a taper angle of 90°, a mean etch rate of 11.7 nm/s, and a depth uniformity of 2.6%.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The increased etching temperature also caused a monotonic increase in the etching rate. Also, Cardinaud et al reported on thin-film etching using SF 6 /Ar and found smooth surfaces, free of fluorinated products, for etching mixtures with a high percentage of argon (95%) …”

Section: Introductionmentioning

confidence: 99%

“…Also, Cardinaud et al reported on thin-film etching using SF 6 /Ar and found smooth surfaces, free of fluorinated products, for etching mixtures with a high percentage of argon (95%). 27 All these examples clearly indicate that the different adopted etching conditions need to be optimized in the perspective of scaling up the process of obtaining SiC trenches suitable for high-quality MOSFET fabrication. For example, in almost all of the already reported studies, no particular attention was paid to obtain a good conic shape of the trench structures that is fundamental for the subsequent filling of them with gate oxide for the MOSFET fabrication.…”

Section: ■ Introductionmentioning

confidence: 99%

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Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

et al. 2021

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Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF 6 -based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.

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“…Hard zones are also different from the micromasking effect, which is rather due to the local redeposition of etched compounds. Such compounds are resistive to chemical etching [83,84].…”

Section: Physical Etching With Ionsmentioning

confidence: 99%

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

Dain¹,

Laourine²,

Guilet³

et al. 2021

Plasma Sources Sci. Technol.

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The dry etching process of Fe, Cr and Fe-Cr alloys under a chlorine-based plasma is studied. The objective is to create new surface functionalities. The approach combines an experimental study of an ICP (Inductively Coupled Plasma) reactor with the development of a multi-scale etching model including kinetic, sheath and surface models. The results from plasma etching of substrates made of Fe, Cr and Fe-Cr alloys are presented. Optical emission spectroscopy and interferometry measurements show strong modifications of the plasma when Fe or Cr samples are present in the reactor. It is shown that Fe is easier to etch than Cr. The study highlights the role of chemical etching by the formation of volatile products such as FeCl 3 . The Cr content in Fe-Cr alloys has a strong impact on both the lateral and vertical etch rates, as well as on the roughness along the profile. For Fe-Cr alloys, the experimental and calculated values of etch rate are very similar. The concept of hard zones is introduced to get a better agreement between simulation results and experimental ones. This good agreement demonstrates the capability of the developed simulator to implement new phenomena.

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Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas

Cited by 7 publications

References 50 publications

The Antibacterial Activity of Hierarchical Patterns of Nanostructured Silicon Fabricated Using Block Copolymer Micelle Lithography

The Antibacterial Activity of Hierarchical Patterns of Nanostructured Silicon Fabricated Using Block Copolymer Micelle Lithography

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

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