Surface composition of AlN powders studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy

Liao, Hongmei; Sodhi, Rana N.S.; Coyle, Thomas W.

doi:10.1116/1.578626

Cited by 128 publications

(50 citation statements)

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“…5(d). N 1s peak at 396.07 eV, which is assigned to the N\Al bond [35], confirms the presence of AlN. Peak at 398.0 eV (N\Al\O bond [33]), on the other hand, corresponds to the b5 at.% O present in the bulk film.…”

Section: Resultsmentioning

confidence: 78%

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

et al. 2012

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We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3 ). At 185°C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of~0.86 Å/cycle from 100 to 200°C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≥ 225°C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185°C were investigated by Xray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185°C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at~5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum.

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Section: Resultsmentioning

confidence: 78%

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

et al. 2012

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“…In contrast, the unwashed samples contained a mixture of aluminum oxide and nitride that comprised roughly 10% of the surface of the surface composition of the samples, as determined from XPS (see Figure 1). The spectra resembled the spectra of AlN that has been exposed to oxygen [27]. The HF washed Fe-and Ni-derived samples contained metal particles encapsulated by carbon that were undetectable by XPS, but were evident in TEM and were physically visible after oxidation of the carbon.…”

Section: Catalyst Preparation and Physical Characterizationmentioning

confidence: 71%

Non-metal Catalysts for Dioxygen Reduction in an Acidic Electrolyte

2006

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Active non-metal catalysts for the Oxygen Reduction Reaction (ORR) were prepared by decomposition of acetonitrile vapor at 900°C over a pure alumina support, and supports containing 2 wt% Fe or 2 wt% Ni on alumina. The exposed alumina and metal in the samples were subsequently washed away with HF acid to purify the solid carbon material. The sample prepared with iron was the most active sample for the ORR, with only 100 mV greater overpotential than a commercial 20 wt% Pt / Vulcan Carbon catalyst. However, nitrogen-containing carbon deposited on pure alumina (which contained less than 1 ppm metal contamination) was also quite active, demonstrating that platinum or iron is not required for ORR activity. Characterization by XPS and TEM revealed that the more active samples had nanostructured carbon with more edge plane exposure than the less active tube structures formed from the nickel sample.

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“…The existence of a hydroxide layer on the surface of InAlN is unfavorable for device fabrication involving interface formation with other materials because the hydroxide is chemically and thermally unstable [7], [9]- [11]. Therefore, this layer should be removed prior to interface formation.…”

Section: Resultsmentioning

confidence: 99%

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Nakano

Akazawa

2013

IEICE Trans. Electron.

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SUMMARYWe investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HF treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.

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Surface composition of AlN powders studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy

Cited by 128 publications

References 1 publication

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Non-metal Catalysts for Dioxygen Reduction in an Acidic Electrolyte

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

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