Surface Condition of Zn Target in a DC Reactive Magnetron Sputtering Plasma Source Using Water Vapor Plasma

Catapang, Allen Vincent; TATEMATSU, Hirotaka; STREETER, Oliver M.; Hernandez, J. E.; Vasquez, Magdaleno R.; WADA, Motoi

doi:10.1585/pfr.17.2406040

Cited by 1 publication

(2 citation statements)

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“…The presence of the oxide formed on the magnetron target surface specific to water vapor has been reported, and the reduced sputtering efficiency and yield were quantified through the difference in the target surface roughness and differential reflectance. 40) The longer the discharge is operated with water vapor, the more difficult it is to maintain the discharge. This behavior can be attributable to a lower density of secondary electrons generated from the sputtering target with the lower efficiency of the oxide as compared to fresh metallic surfaces.…”

Section: Effect Of Water Vapor Contentmentioning

confidence: 99%

“…Then, the growth mechanism changes depending on the reactive species gas content and the amount of flux as these modify the energy and the surface reaction rate. For the 20% water content, Ar sputtering of Zn at the target surface is still dominant, 40) which results in a high Zn ion flux towards the surface. The formation of the oxide then becomes dependent on the metal surface orientations where oxide nucleation is favored.…”

Section: Effect Of Water Vapor Contentmentioning

confidence: 99%

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Near substrate surface plasma characteristics of ZnO film deposition in DC reactive magnetron sputtering with water vapor

Catapang

Abalos

Hernandez

et al. 2023

Jpn. J. Appl. Phys.

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The effect of varying the water vapor content in a DC magnetron sputtering process was investigated for zinc oxide film formation. The plasma parameters near the substrate surface were measured using a single Langmuir probe, and the deposited films were characterized using X-ray diffraction, X-ray reflectivity, optical transmittance, and 4-point probe methods. In the region near the substrate surface, the addition of water changes the plasma properties, and the measured plasma parameters showed the changes corresponding to the transition in the film growth mechanism from Zn to ZnO. Depositing at 40% water content resulted to a highly transparent film with a ρ of 1.20 Ω cm. The band gap of films deposited at 40 to 100% settings ranged from 3.36 to 3.34 eV, which matches the expected shallow hydrogen donor doping in ZnO.

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Section: Effect Of Water Vapor Contentmentioning

confidence: 99%

Section: Effect Of Water Vapor Contentmentioning

confidence: 99%