Surface defects of TiO2(110): A combined XPS, XAES AND ELS study

Characterization of thin silicon overlayers on rutileTiO2(110)−(1×1)

“…19 The TiO 2 (110)-(1x1) surface was prepared by annealing up to 450 • C in O 2 atmosphere (6.5 × 10 −7 mbar) during 90 minutes, and by subsequent cooling of the sample in O 2 atmosphere during 30 minutes. 20,21 It has been reported in the literature how annealing at lower temperatures (250 • -390 • C) could lead to rosette structures. 15 With the techniques used in this manuscript we cannot fully ascertain the absence of these structures even if after our annealing schedule we have observed a sharp (1 × 1) LEED pattern, corresponding to a well ordered surface.…”

TinO2n−1Magnéli phases studied using density functional theory

“…Despite the existence of many studies about defects in rutile TiO 2 , both experimental [20][21][22][23][24][25][26][27][28] and theoretical [21,25], there are few works on the intrinsically defective Magnéli phases [29][30][31][32][33][34][35]. Electronic structure calculations have been used to understand mainly the Ti 2 O 3 [32] and Ti 4 O 7 [29][30][31].…”

Suppression of Photoinduced BBO Defects Generation on TiO2(110) by Water

“…TiO 2 has been well known because of its important roles in catalytic activity, occurrence of the strong metal-support interaction, oxide growth rates in electrochemical cells, and so on [4,5]. Surface defects can be created by thermal annealing in UHV [6,7], evaporation of excess Ti [8,9], Ar + sputtering [6,7,10,11], electron stimulated desorption (ESD) [4,11], and ultraviolet (UV) photo-stimulated desorption (PSD) [12,13]. It is well established that thermal annealing in UHV usually creates relatively small quanti-ties of point defects (reduced Ti(Ti 3+ )), whereas, Ar + sputtering can produce much higher quantities of defects with mixed Ti oxidation states (Ti 3+ , Ti 2+ , and Ti + ).…”