Optical Fiber Communication 1988
DOI: 10.1364/ofc.1988.tuc2
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Surface degradation mechanism of InP/InGaAs APDs

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Cited by 3 publications
(5 citation statements)
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“…The increase in generation near the perimeter of the active region can affect fiber alignment if the fiber is aligned to the location of peak photocurrent. In addition, deviations from the uniform gain profile can result in additional excess noise and reduced mean time to failure [13][14][15]. Non-uniformity in the generation profile has been observed in other APD designs including an APD with a double diffused well and two floating guard rings [11].…”
Section: (µM) Y( µM)mentioning
confidence: 96%
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“…The increase in generation near the perimeter of the active region can affect fiber alignment if the fiber is aligned to the location of peak photocurrent. In addition, deviations from the uniform gain profile can result in additional excess noise and reduced mean time to failure [13][14][15]. Non-uniformity in the generation profile has been observed in other APD designs including an APD with a double diffused well and two floating guard rings [11].…”
Section: (µM) Y( µM)mentioning
confidence: 96%
“…These fields are generally located at the end of the primary well or the end of the edge breakdown suppression mechanism. Bias-temperature life tests have shown that failure in conventional guard ring APDs have resulted from surface degradation, surface leakage currents and localized surface avalanche breakdown resulting from high electric fields at the semiconductor surface [13,14,15]. These high electric fields lead to hot hole injection into the passivation layer underneath the guard ring.…”
Section: Introductionmentioning
confidence: 99%
“…(3) Geometry inhomogeneity For electronic IC, the geometry inhomogeneity may induce current crowding and cause early reliability failure [67][68][69]. For APD, the inhomogeneous structure is typically generated by mesa etch [70][71][72]. The etched mesa interface may cause an increase in leakage current due to the generation of surface state [70,71].…”
Section: Future Reliability Challengesmentioning
confidence: 99%
“…For APD, the inhomogeneous structure is typically generated by mesa etch [70][71][72]. The etched mesa interface may cause an increase in leakage current due to the generation of surface state [70,71].…”
Section: Future Reliability Challengesmentioning
confidence: 99%
“…Some groups of researchers have been analyzed, the failure mode occurs [3] - [14]. The failure criteria of photodiode detectors have been based on dark current deteriorations after specific hours of accelerated degradation of the detectors.…”
Section: Introductionmentioning
confidence: 99%