1996
DOI: 10.4011/shikizai1937.69.121
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Surface Design for Powder on Dry Process

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Cited by 1 publication
(2 citation statements)
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“…, and Ti(OÁt-C 3 H 7 ) 4 were used as Pb, La, Zr, and Ti source materials, respectively. [3][4][5][6][7] Oxygen was used as an oxidant. The source gas flow was led to the substrate through a nozzle in a cold-wall vertical reaction chamber.…”
Section: Methodsmentioning
confidence: 99%
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“…, and Ti(OÁt-C 3 H 7 ) 4 were used as Pb, La, Zr, and Ti source materials, respectively. [3][4][5][6][7] Oxygen was used as an oxidant. The source gas flow was led to the substrate through a nozzle in a cold-wall vertical reaction chamber.…”
Section: Methodsmentioning
confidence: 99%
“…PZT films must be deposited on silicon substrates due to their good compatibility with silicon technologies. Therefore, highquality PZT films have been prepared by several deposition techniques, such as metalorganic chemical vapor deposition (MOCVD), [3][4][5][6][7][8][9] sol-gel [10][11][12][13] and sputtering methods. 14) The structural and electrical properties have also been extensively studied in the PZT films.…”
Section: Introductionmentioning
confidence: 99%