Surface diffusion of potassium on (100) and (111) germanium planes

Suchorski, J.S.

doi:10.1016/0039-6028(90)90703-b

Cited by 9 publications

(1 citation statement)

References 8 publications

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“…Also, solutes were often observed to align along specific directions, P was In the case of semiconductors, the very same problems are very likely to affect the data, especially since most APT analysis are performed in laser pulsing mode. Surface migration of various adatoms on Ge [59][60] and Si [61][62] was investigated by several techniques. The difference in the energy barrier for surface migration and desorption was measured to be in the same range (respectively 1.3-2.6 eV and 1.5-3.5 for example for Si [62]).…”

Section: Discussionmentioning

confidence: 99%

Impact of directional walk on atom probe microanalysis

Gault¹,

Danoix²,

Hoummada³

et al. 2012

Ultramicroscopy

142

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In the atom probe microanalysis of steels, inconsistencies in the measured compositions of solutes (C, N) have often been reported, as well as their appearance as molecular ions. Here we propose that these issues might arise from surface migration of solute atoms over the specimen surface. Surface migration of solutes is evidenced by field-ion microscopy observations, and its consequences on atom probe microanalysis are detailed for a wide range of solute (P, Si, Mn, B, C, N). It is proposed that directional walk driven by field gradients over the specimen surface and thermally activated is the prominent effect.Comment: 30 pages , 10 figure

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Section: Discussionmentioning

confidence: 99%

Impact of directional walk on atom probe microanalysis

Gault¹,

Danoix²,

Hoummada³

et al. 2012

Ultramicroscopy

142

View full text Add to dashboard Cite

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Adsorption of Alkali and Other Electropositive Metals

Наумовец

2015

Surface and Interface Science

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Desorption kinetics and surface diffusion of potassium, rubidium and cesium on a silicon(111)7 × 7‐surface

1992

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Using pulsed atomic beam technique and a surface ionization ion microscope, the desorption kinetics and the surface diffusion of the alkalis potassium, rubidium and cesium were investigated on a Si(l11)7 x 7-surface at extremely low alkali coverages.In the temperature range 1 120 . . . 800 K, the mean adsorption lifetime 7 ( T ) = 7 0 -exp(E',,,/k T ) and the mean diffusion length X ( T )defined in the equilibrium between adsorption, diffusion and desorptionwere measured. From these data the diffusion constant D ( T ) = D o . exp(-E,,,,/k T) was obtained as D = X'/T. For temperatures T 5 750 K, the diffusion constant was calculated from nonstationary alkali concentration profiles using the Boltzmann-Matano method.From the temperature dependence of these quantities the parameters of desorption (E&, ro) and surface diffusion (Edirr, Do) for K, Rb and Cs on Si(1 11) were obtained. The values of Edifr and Do are comparably high and may be interpreted by non-localized diffusion according to a model proposed by Bonze1 (Surf. Sci. 21 (1970) 45).

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Surface diffusion of potassium on (100) and (111) germanium planes

Cited by 9 publications

References 8 publications

Impact of directional walk on atom probe microanalysis

Impact of directional walk on atom probe microanalysis

Adsorption of Alkali and Other Electropositive Metals

Desorption kinetics and surface diffusion of potassium, rubidium and cesium on a silicon(111)7 × 7‐surface

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