1998
DOI: 10.1063/1.366972
|View full text |Cite
|
Sign up to set email alerts
|

Surface dopant concentration monitoring using noncontact surface charge profiling

Abstract: This study is concerned with variations of the concentration of active boron dopant in the near surface region of silicon wafers. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from the surface polishing process. The temperature dependence of boron activation is studied using the surface charge profiling method. Based on the determined activation energy of 1.28 eV it was concluded that in the p-type wafers used in this study initially observed bo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
6
0

Year Published

1998
1998
2015
2015

Publication Types

Select...
8
1

Relationship

2
7

Authors

Journals

citations
Cited by 19 publications
(7 citation statements)
references
References 6 publications
1
6
0
Order By: Relevance
“…The slope of the I signal / versus plot gives the surface lifetime. The signal also contains the substrate doping density or resistivity, leading to contactless resistivity measurements [52]. Resistivity maps of epitaxial layers are shown in figure 20 [53].…”
Section: Frequency-dependent Surface Photovoltagementioning
confidence: 99%
“…The slope of the I signal / versus plot gives the surface lifetime. The signal also contains the substrate doping density or resistivity, leading to contactless resistivity measurements [52]. Resistivity maps of epitaxial layers are shown in figure 20 [53].…”
Section: Frequency-dependent Surface Photovoltagementioning
confidence: 99%
“…Assuming that a given sample surface is in inversion both before and after a certain treatment, any changes in w must indicate a change in the sub-surface contamination level [628±630]. In a recent example, Roman et al monitored the effective sub-surface p-type doping concentration in boron-doped Si wafers [630]. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from surface polishing processes.…”
Section: Surface Band Bending ± Other Methodsmentioning
confidence: 99%
“…22 Here n i is the intrinsic carrier concentration in Si. 22 Here n i is the intrinsic carrier concentration in Si.…”
Section: ͑36͒mentioning
confidence: 99%