Surface voltage and surface photovoltage measurements have become
important semiconductor characterization tools, largely because of the
availability of commercial equipment and the contactless nature of the
measurements. The range of the basic technique has been expanded through the
addition of corona charge. The combination of surface charge and illumination
allows surface voltage, surface barrier height, flatband voltage, oxide
thickness, oxide charge density, interface trap density, mobile charge
density, oxide integrity, minority carrier diffusion length, generation
lifetime, recombination lifetime and doping density to be determined. In this
review I shall briefly review the history of surface voltage, then discuss the
principles of the technique and give some examples and applications.