2010
DOI: 10.1351/pac-con-09-12-05
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Surface effects on optical and electrical properties of ZnO nanostructures

Abstract: This article presents a comprehensive review of the current research addressing the surface effects on physical properties and potential applications of nanostructured ZnO. Studies illustrating the transport, photoluminescence (PL), and photoconductivity properties of ZnO with ultrahigh surface-to-volume (S/V) ratio are reviewed first. Secondly, we examine recent studies of the applications of nanostructured ZnO employing the surface effect on gas/chemical sensing, relying on a change of conductivity via elect… Show more

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Cited by 80 publications
(66 citation statements)
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“…The concentration of chemisorbed O À 2ðadÞ at the surface of metal oxides at room temperature is greater in air compared to vacuum. 17,18 Our results in Fig. 2 show that the devices tested under air had a higher switching probability compared to the same ReRAM devices tested under vacuum, which suggests that a higher O À 2ðadÞ concentration leads to a higher switching probability.…”
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confidence: 70%
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“…The concentration of chemisorbed O À 2ðadÞ at the surface of metal oxides at room temperature is greater in air compared to vacuum. 17,18 Our results in Fig. 2 show that the devices tested under air had a higher switching probability compared to the same ReRAM devices tested under vacuum, which suggests that a higher O À 2ðadÞ concentration leads to a higher switching probability.…”
mentioning
confidence: 70%
“…This phenomenon can be understood by the lower conductivity near the ZnO surface that is induced by oxygen chemisorption. 18 The surface band bending effect is more pronounced as the O À 2ðadÞ concentration increases, resulting in the electrode dependence of the device's HRS. On the other hand, the IS is not electrode dependent, suggesting that the bulk component overwhelms surface effects, since there are no conductive paths within the bulk of the device prior to the electroforming process.…”
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confidence: 99%
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“…O À 2 ðadÞ ) at surface-related defects, the so-called surface effect. 4 Indeed, recent studies investigating the influence of ambiences conditions, 5 harsh environments, 6 and roughness 7 on metal oxidebased RRAM have highlighted SDR as the main cause of low switching yield and resistance fluctuation. On the other hand, the treatments such as surface modification, 6 doping, 8 and electrode material engineering 9 have improved RS stability and RRAM performance due to the better controllability of chemisorbed oxygen at surface-related defects.…”
Section: Effect Of Ultraviolet Illumination On Metal Oxide Resistive mentioning
confidence: 99%
“…The photocurrent is ascribed to the suppression of SDR via oxygen photodesorption of chemisorbed oxygen. 4 Under UV illumination with the energy higher than the ZnO bandgap, the photo-generated electron-hole pairs are spatially separated in ZnO due to the discharge of chemisorbed oxygen by photo-excited holes (O À 2 ðadÞ þ h þ ! O 2ðgÞ ).…”
Section: Effect Of Ultraviolet Illumination On Metal Oxide Resistive mentioning
confidence: 99%