“…O À 2 ðadÞ ) at surface-related defects, the so-called surface effect. 4 Indeed, recent studies investigating the influence of ambiences conditions, 5 harsh environments, 6 and roughness 7 on metal oxidebased RRAM have highlighted SDR as the main cause of low switching yield and resistance fluctuation. On the other hand, the treatments such as surface modification, 6 doping, 8 and electrode material engineering 9 have improved RS stability and RRAM performance due to the better controllability of chemisorbed oxygen at surface-related defects.…”