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Nakajima, Yuji; Takeda, Shumpei; Nagao, Tadaaki; Hasegawa, Shuji; Tong, Xiao

doi:10.1103/physrevb.56.6782

Cited by 95 publications

(91 citation statements)

References 20 publications

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“…Experimental results for the surface conductance in the more commonly investigated Si(111)-(7 Â 7) surfaces span 5 orders of magnitude 14 , from 10 À 3 to 10 À 8 Ohm À 1 . Additionally, the carrier occupation of the surface band must be estimated from other techniques, such as photoemission 31 .…”

Section: Discussionmentioning

confidence: 99%

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

et al. 2013

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The electrical properties of nanostructures are extremely sensitive to their surface condition. In very thin two-dimensional crystalline-semiconductor sheets, termed nanomembranes, the influence of the bulk is diminished, and the electrical conductance becomes exquisitely responsive to the structure of the surface and the type and density of defects there. Its understanding therefore requires a precise knowledge of the surface condition. Here we report measurements, using nanomembranes, that demonstrate direct charge transport through the p* band of the clean reconstructed Si(001) surface. We determine the charge carrier mobility in this band. These measurements, performed in ultra-high vacuum to create a truly clean surface, lay the foundation for a quantitative understanding of the role of extended or localized surface states, created by surface structure, defects or adsorbed atoms/molecules, in modifying charge transport through semiconductor nanostructures.

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Section: Discussionmentioning

confidence: 99%

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

et al. 2013

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“…4,5 The electron density in the S 1 -state band varies among experiments, because it is significantly affected by a tiny quantity of additional Ag adatoms or other possible dopant impurities or surface states. [6][7][8] By means of high-resolution electron-energy-loss spectroscopy ͑HREELS͒, Nagao et al have clearly observed 2D plasmons owing to the S 1 -state band that occur in a virtually infinite area. 9 Taking account of exchange-correlation effects, Inaoka et al have examined the 2D plasmons in relation to the above HREELS measurements.…”

Section: Introductionmentioning

confidence: 99%

Predicted energy-loss spectrum of low-dimensional plasmons in a metallic strip monolayer on a semiconductor surface

Inaoka

2005

Phys. Rev. B

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In view of high-resolution electron-energy-loss spectroscopy, we predict the energy-loss spectrum of lowdimensional ͑LD͒ plasmons in a metallic strip monolayer on a semiconductor surface. By means of the time-dependent local density approximation, we calculate the dynamical response of our electron system to some typical trajectories of a probe electron incident on the surface along the strip. As shown in our previous work, the energy dispersion of the LD plasmons is composed of a series of dispersion branches where the node number in oscillation of the induced electron density across the strip increases one by one with ascending energy. These branches can produce a series of loss peaks in the spectrum. The branch of the two-node modes gives rise to an outstanding loss peak, and the branches of the zero-node modes ͑symmetric edge plasmons͒ and the four-node modes also create significant loss peaks, when the intersection of the scattering plane with the surface plane runs around the center line of the strip region. The branch of the one-node modes ͑antisym-metric edge plasmons͒ yields a remarkable loss peak, when the intersection runs just near one of the strip edges. These loss peaks should actually be observed in the spectrum, if there are a sufficient number of strip regions in a surface area illuminated by an electron beam.

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“…For example, the surface electric conductivity of the surface, for which interesting experimental results has been obtained recently [17], must be affected by the¯uctu-ating nature of the surface. To clarify such effects must be an interesting future problem.…”

Section: Discussionmentioning

confidence: 99%

Atomic and electronic structure of the Si(111)-√3x√3-Ag surface reexamined using first-principles calculations

Watanabe

Kondo

Nakamura

et al. 2000

Science and Technology of Advanced Materials

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We have reexamined the atomic and electronic structures of the Si(111)-3 p £ 3 p -Ag surface using ®rst-principles calculations within the local density functional approach. First, we found that a discrepancy among previous ®rst-principles studies concerning the honeycombchained-triangle (HCT) model, which was believed to describe the structure of the surface, can be attributed to the difference in the structural parameters adopted in the calculations. Second, we have con®rmed that the recently proposed inequivalent triangle (IET) model, where the positions of the Ag atoms are distorted a little from those in the HCT, is energetically more stable than the HCT one. We have also examined several other models that have distortions similar to the IET one. The results suggest that at room temperature the surface does not stay in the HCT con®guration, but¯uctuates between various con®gurations. q

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Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-3×3-Ag

Cited by 95 publications

References 20 publications

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

Predicted energy-loss spectrum of low-dimensional plasmons in a metallic strip monolayer on a semiconductor surface

Atomic and electronic structure of the Si(111)-√3x√3-Ag surface reexamined using first-principles calculations

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