Surface emitted second-harmonic generation from a quasi-phase matched waveguide in an Al_xGa_1-xAs/Al_2O_3 microcavity

Abstract

. (1998). Surface emitted second-harmonic generation from a quasi-phase matched waveguide in an AlxGa1-xAs/Al2O3 microcavity. Optics Express, 2(12), 462-470. DOI: 10.1364/OE.2.000462 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

“…Yoo et al [33] again achieved a much-improved efficiency of 15% W −1 at 1.54 µm in AlGaAs waveguides due to a tighter optical confinement realized by a buried heterowaveguide. Janz et al [34] reported surface-emitted SHG near 1.55 µm from a QPM waveguide in Al x Ga 1−x As/Al 2 O 3 microcavity with an efficiency of 5 × 10 −3 % W −1 . Bouchard et al [41] measured an effective nonlinear susceptibility modulation of 0.02 pm V −1 in the 1.5-1.6 µm spectral range in Al x Ga 1−x As asymmetric quantumwell waveguides using SHG experiments, where the QPM was realized using ion-implantation-induced intermixing.…”

“…This implies that, for a fixed sample length, the conversion efficiency is 1/m 2 times lower in mth-order QPM compared to first-order QPM. Earlier reports [31][32][33][34][35] on quasi-phase matched interactions in semiconductors involved the epitaxial growth of Al x Ga 1−x As on a patterned substrate, where the periodic crystal domain inversion was achieved using selective etching and wafer bonding. Although this method is direct, efforts were limited by relatively large losses in these structures.…”

“…On the other hand, a fundamental limitation with GaAs is its optical isotropy, which inhibits birefringent phase matching. To circumvent this problem, a number of techniques have been effectively used to achieve phase matching in GaAs-based waveguide structures, including form birefringence phase matching (BPM) [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30], quasi-phase-matching (QPM) [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46] and modal phase matching (MPM) [47][48][49][50][51][52]. Variations of some of these techniques, demonstrated experimentally and predicted theoretically, include periodic switching of nonlinearity (PSN) in GaAs/AlGaAs waveguide crystals [53,54], sublattice reversal epitaxy [55], crystal domain inversion [56,57], orientation patterned GaAs [58][59]…”

Emerging material systems for integrated optical Kerr frequency combs

“…22 (a)). Building on previous work in parametric oscillation and Raman [61,61,62,64,187,342], silica microtoroids were used for generating and studying broadband Kerr frequency combs in 2007. [317] Benefiting from the smooth surface of the devices, quality factors of the silica toroids can achieve over 10 8 easily, which greatly enhances the circulating power inside the cavity and boosts comb generation.…”