Surface Engineered Hybrid Core–Shell Si‐Nanowires for Efficient and Stable Broadband Photodetectors

Sarkar, Krishnendu; Devi, Pooja; Lata, Akash; Lokku, Vinod Kumar; Kumar, Praveen

doi:10.1002/adom.202000228

Cited by 20 publications

(9 citation statements)

References 52 publications

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“…We present a comparison of the responsivity of our device with state‐of‐the‐art heterojunction photodiodes in Figure S9 in the Supporting Information. [ 38–42 ]…”

Section: Resultsmentioning

confidence: 99%

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

2022

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Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years. Currently reported self‐biased heterojunction photodiodes routinely have external quantum efficiency (EQE) significantly below 100% due to optical and electrical losses. Herein, an approach that virtually overcomes this 100% EQE challenge via low‐aspect‐ratio nanostructures and drift‐dominated photocarrier transport in a heterojunction photodiode is proposed. Broadband near‐ideal EQE is achieved in nanocrystal indium tin oxide/black silicon (nc‐ITO/b‐Si) Schottky photodiodes. The b‐Si comprises nanostalagmites which balance the antireflection effect and surface morphology. The built‐in electric field is explored to match the optical generation profile, realizing enhanced photocarrier transport over a broadband of photogeneration. The devices exhibit unprecedented EQE among the reported leading‐edge heterojunction photodiodes: average EQE surpasses ≈98% for wavelengths of 570–925 nm, while overall EQE is greater than ≈95% from 500 to 960 nm. Further, only elementary fabrication techniques are explored to achieve these excellent device properties. A heart rate sensor driven by nanowatt faint light is demonstrated, indicating the enormous potential of this near‐ideal b‐Si photodiode for low power consuming applications.

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“…We present a comparison of the responsivity of our device with state‐of‐the‐art heterojunction photodiodes in Figure S9 in the Supporting Information. [ 38–42 ]…”

Section: Resultsmentioning

confidence: 99%

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

2022

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“…The rough, porous nature of SiNW surface prepared by MaCE can be a good choice for high responsivity photodiodes. By forming heterojunction with SnO 2 [256] or reduced graphene oxide with carbon quantum dot, [257] the SiNW based photodetectors have shown high performance in UV and broadband (visible and near-infrared [IR]) photodetectors.…”

Section: Nanoelectronics and Nanophotonicsmentioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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“…Moreover, owing to atmospheric scattering and scattering due to dust particles in air, the device contact area with light is critical to its light-harvesting performance. For planar microstructures, avenues for further increases in absorbed light energy are limited; thus, further performance improvement of devices employing such structures is relatively challenging. ,, Therefore, novel light-harvesting microstructures must be exploited for further development of photodetectors.…”

Section: Introductionmentioning

confidence: 99%

“…For planar microstructures, avenues for further increases in absorbed light energy are limited; thus, further performance improvement of devices employing such structures is relatively challenging. 1,12,13 Therefore, novel lightharvesting microstructures must be exploited for further development of photodetectors.…”

Section: ■ Introductionmentioning

confidence: 99%

Bioinspired Compound Eyes for Diffused Light-Harvesting Application

Fang

et al. 2022

ACS Appl. Mater. Interfaces

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Natural compound eyes endow arthropods with wide-field high-performance light-harvesting capability that enables them to capture prey and avoid natural enemies in dim light. Inspired by natural compound eyes, a curved artificial-compound-eye (cACE) photodetector for diffused light harvesting is proposed and fabricated, and its light-harvesting capability is systematically investigated. The cACE photodetector is fabricated by introducing a cACE as a light-harvesting layer on the surface of a silicon-based photodetector, with the cACE being prepared via planar artificial-compound-eye (pACE) template deformation. The distinctive geometric morphology of the as-prepared cACE effectively reduces its surface reflection and the dependence of the projected area on the incident light direction, thereby significantly improving the light-harvesting ability and output photocurrent of the silicon-based photodetector. Furthermore, the performances of cACE, pACE, and bare polydimethylsiloxane (PDMS)-attached photodetectors as diffused light detectors are investigated under different luminances. The cACE-photodetector output photocurrent is 1.395 and 1.29 times those of the bare PDMS-attached and pACE photodetectors, respectively. Moreover, this photodetector has a desirable geometric shape. Thus, the proposed cACE photodetector will facilitate development of high-performance photodetectors for luminance sensing.

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Surface Engineered Hybrid Core–Shell Si‐Nanowires for Efficient and Stable Broadband Photodetectors

Cited by 20 publications

References 52 publications

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Bioinspired Compound Eyes for Diffused Light-Harvesting Application

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