Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10^6

Guha, Biswarup; Marsault, Félix; Cadiz, Fabian; Morgenroth, Laurence; Ulin, V. P.; Berkovitz, Vladimir; Lemaı̂tre, A.; Gómez, Carmen; Amo, A.; Combrié, Sylvain; Gérard, Bruno; Leo, Giuseppe; Favero, Iván

doi:10.1364/optica.4.000218

Cited by 115 publications

(90 citation statements)

References 42 publications

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“…The lack of sufficiently high Q in semiconductor platforms has limited the ability to harness their attractive material properties for nonlinear optics applications like microcombs. Recent demonstrations of whispering gallery mode or partially etched waveguide cavities in (Al)GaAs [27,28] achieved quality factor in the millions. This indicates that the current loss of integrated III-V waveguides can potentially be dramatically reduced.…”

Section: Pgmentioning

confidence: 99%

“…Recent research shows that this factor starts to pg. 10 become dominate for resonators operating in the high Q region [27]. A way to reduce loss originating from this source is to apply a surface passivation treatment to the waveguide surface, which can eliminate the intra-band states.…”

Section: Pgmentioning

confidence: 99%

“…In addition to the microcomb discussed above, the AlGaAsOI platform with ultra-low loss also provides solutions to realize many other nonlinear processes with ultra-high efficiencies on chip. One example is second order frequency conversion [27], which is of importance for various applications such as -2 self-referencing. Previously, second harmonic generation (SHG) with record high conversion efficiency based on (Al)GaAsOI waveguides and resonators has been demonstrated based on GaAsOI waveguide [30] [41].…”

Section: Pgmentioning

confidence: 99%

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Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

et al. 2020

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†All three authors contributed equally to this work pg. 2 Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10 6 . Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 µW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future. pg. 3 The extensive research on integrated nonlinear photonics in the last few years, driven by the breakthrough of the microcomb and other on-chip nonlinear devices, has opened up many new opportunities for on-chip integrated photonics, ranging from spectroscopy to atomic clock applications [1-3]. The demand to construct efficient nonlinear devices has motivated the development of different material platforms in nonlinear photonics. A common endeavor of those efforts is the reduction of the waveguide propagation loss, which is essential to enable high Q cavities so as to enhance the build-up power in the resonators and therefore increase the efficiency of the nonlinear optical processes [4]. In this regard, silica on silicon resonators [5-7] have long been dominant offering Q factors as high as 1 billion [6]. These devices can access a wide range of nonlinear effects including microwave rate soliton microcombs [8].However, over the last 5 years, there has been remarkable progress to significantly improve the Q factors of resonators in many other nonlinear integrated optical material platforms. One example is the Si3N4 platform, which delivers high performance in Kerr comb generation on chip [9][10][11]. The Si3N4 micro-resonators have enabled the generation of efficient frequency combs with repetition rates from microwave to THz frequencies [12] and improved Q factor of beyond 30 million [13,14]. Another material, which recently attracted attention, is LiNbO3. It offers additional opportunities for integrated nonlinear...

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Section: Pgmentioning

confidence: 99%

Section: Pgmentioning

confidence: 99%

Section: Pgmentioning

confidence: 99%

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Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

et al. 2020

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“…Such trade‐off, discussed in more depth by Davanco et al., can be significantly relaxed by introducing an alternative material onto the chip, with which lower propagation losses can more easily be achieved . For instance, while the lowest reported propagation losses in QDs‐free GaAs waveguides have to date remained in the several dB cm –1 range, and cavities with quality factors exceeding 10 6 have only recently been demonstrated, albeit at telecom wavelengths, weakly‐guiding Si 3 N 4 waveguides demonstrated propagation losses of <0.1 dB m –1 , and cavities with quality factors >10 7 . Indeed, most quantum photonic chips of significant complexity demonstrated to date have been produced in single material systems with which reliably low propagation losses could be achieved, e.g., silica, high‐index dopes silica, Si 3 N 4 , silicon‐on‐insulator‐, but which did not offer deterministic light‐generation capabilities.…”

Section: Heterogeneous Integration For Quantum Photonicsmentioning

confidence: 99%

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Zhao

Chen

et al. 2019

Adv Quantum Tech

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Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on‐demand generation of single‐photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site‐controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light‐emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

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“…Moreover, optically active layers can be easily grown on GaAs wafers, allowing the fabrication of light-emitting optomechanical devices [35][36][37].Despite the tougher challenges in fabricating high optical quality factor in GaAs cavities, in comparison to the more mature fabrication of silicon, both wet and dry chemistry etching have been successfully developed. Wet etching, followed by surface passivation, resulted in record high intrinsic optical quality factors of 6 × 10 6 in GaAs microdisks [38]. Nonetheless, the fabrication of large aspect ratio features and small gaps challenge this route due to wet arXiv:1909.06881v1 [physics.app-ph]…”

mentioning

confidence: 99%

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Benevides¹,

Ménard²,

Wiederhecker³

et al. 2019

Opt. Mater. Express

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A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for a smooth device sidewall is discussed. Using the final recipe, optomechanical microdisk resonators are fabricated. The results show a very high optical quality factors of Q opt > 2 × 10 5 , among the largest already reported for dry-etching devices. The final devices are also shown to present high mechanical quality factors and an optomechanical vacuum coupling constant of g 0 = 2π × 13.6 kHz enabling self-sustainable mechanical oscillations for an optical input power above 1 mW. OCIS codes: (130.3990) Micro-optical devices; (230.4000) Microstructure fabrication; (220.4880) Optomechanics 1. Introduction Harnessing the confinement of light with wavelength-scale waveguides and cavities has enabled the realization of table-top scale nonlinear optical phenomena in silicon-compatible photonic chips. Recent examples show the versatility of this integrated photonics approach, such as frequency comb generation [1, 2], quantum computation [3-8], low voltage eletro-optical modulation [9], and optical to microwave coherent conversion [10]. One key ingredient that may also boost this revolution is the interaction between light and mechanical degrees of freedom, enabling both read-out and actuation of mesoscale mechanical modes in waveguides [11] and cavities [12][13][14][15], paving the road towards the sound circuits revolution [16,17]. Throughout the quest for better suited cavity geometries that can host optical and mechanical waves, microdisk cavities have proven to be a simple and effective choice. Their tight radial confinement of whispering gallery optical waves and rather strong interaction with radial breathing mechanical modes lead to high optomechanical coupling rates [18][19][20], which are necessary for efficient device-level functionalities [7,[21][22][23]. Other ingredients in the optomechanical enhancement are the cavity or waveguide material properties. Although silicon is widespread in many optomechanical devices [14,[24][25][26][27] due to its mature fabrication, the interest in III-V materials for optomechanical devices has increased [28-32] due to their unique optical, electronic and mechanical properties. Gallium Arsenide (GaAs), for instance, is advantageous because of its very high photoelastic coefficient [33], which leads to large electrostrictive forces and optomechanical coupling [18,34]. Moreover, optically active layers can be easily grown on GaAs wafers, allowing the fabrication of light-emitting optomechanical devices [35][36][37].Despite the tougher challenges in fabricating high optical quality factor in GaAs cavities, in comparison to the more mature fabrication of silicon, both wet and dry chemistry etching have been successfully developed. Wet etching, followed by surface passivation, resulted in record high intrinsic optical quality factors of 6 × 10 ...

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Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10^6

Cited by 115 publications

References 42 publications

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

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Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10^6

Cited by 115 publications

References 42 publications

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Ar/Cl2 etching of GaAs optomechanical microdisks fabricated with positive electroresist

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Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist