Surface etching of InP(100) by chlorine

Hung, Wei Hsiu; Hsieh, J. T.; Hwang, H.L.; Hwang, Hsin Yen; Chang, Che Chen

doi:10.1016/s0039-6028(98)00666-9

Cited by 16 publications

(19 citation statements)

References 40 publications

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“…We observed some differences between the two spectra, particularly there is a contribution (A) at 16,7 eV binding energy clearly visible at 50 eV. This contribution can be attributed to metallic indium [9] due to the indium droplets created by the ionic cleaning. The fact that the metallic indium droplets are clearly seen at 50 eV (32 eV kinetic energy) but not at 190 eV (172 eV kinetic energy, less surface sensitive) proves that the formation of indium clusters is a surface phenomenon.…”

Section: Cleaning Of the Substratesmentioning

confidence: 81%

“…To decompose the In 4d and the P 2p core levels, we have to know the different chemical environments of the indium and phosphorus atoms. Previous works [7,8] showed that after ionic cleaning, the surface is covered by 25% of metallic indium droplets with an equivalent height of Regarding previous studies on InP(100) [10,11,12,13,14], it is very difficult to find a definitive result on the decomposition of In4d peak, most of the authors found a bulk In-P contribution, and two or three surface peaks assigned to indium adatoms.…”

Section: Cleaning Of the Substratesmentioning

confidence: 97%

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Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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Abstract:The nitridation of InP(100) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450°C has been also analysed. It appears that this system is stable until this temperature, well above the congruent evaporation temperature (370°C) of clean InP(100) : no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [16] studying the InP(100) surfaces I.

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Section: Cleaning Of the Substratesmentioning

confidence: 81%

Section: Cleaning Of the Substratesmentioning

confidence: 97%

Nitridation of InP(100) surface studied by synchrotron radiation

et al. 2005

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“…32,48 This indium hydroxide component explains the presence of the OHgroups component in the initial O 1s core level spectrum measured on the p-GaInP 2 (100) surface emersed from the electrolyte solution under ZCP conditions (Figure 4a). The component with ΔBE = 0.4 eV is assigned to InCl 29,50 as the Cl 2p photoemission is always visible after exposure of the p-GaInP 2 (100) surface to the 1 M HCl aq solution (Figure S2), though the In 2 O 3 -related component has similar chemical shift. 32,48 Obviously, the application of the cathodic bias in the dark to the p-GaInP 2 (100)/1 M HCl aq solution interface has very little effect on the shape of the In 3d spectrum.…”

Section: Resultsmentioning

confidence: 99%

“…The components, which are at ΔBE of 0.7 and 1.3 eV, are assigned to indium hydroxide In(OH) 3 and indium phosphate InPO 4 , respectively. , This indium hydroxide component explains the presence of the OH-groups component in the initial O 1s core level spectrum measured on the p-GaInP 2 (100) surface emersed from the electrolyte solution under ZCP conditions (Figure a). The component with ΔBE = 0.4 eV is assigned to InCl , as the Cl 2p photoemission is always visible after exposure of the p-GaInP 2 (100) surface to the 1 M HCl aq solution (Figure S2), though the In 2 O 3 -related component has similar chemical shift. , Obviously, the application of the cathodic bias in the dark to the p-GaInP 2 (100)/1 M HCl aq solution interface has very little effect on the shape of the In 3d spectrum. As can be seen from the difference spectra, only a decrease of the metallic indium signal is observed after exposure to the solution under −0.7 V, whereas after exposure under −1.8 V in dark the In 3d spectrum remains essentially unchanged (Figure b).…”

Section: Resultsmentioning

confidence: 99%

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

et al. 2017

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(Photo)electrochemical processes occurring under cathodic polarization at the p-GaInP2(100)/1 M HClaq solution interface were investigated in detail by high-resolution surface sensitive synchrotron-radiation photoemission spectroscopy. It was found that on application of the cathodic bias in the dark to the p-GaInP2(100)/1 M HClaq solution interface the electrochemical processes are started at a bias of about −1.0 V vs reversible hydrogen electrode (RHE), where cathodic current passing through the semiconductor/electrolyte interface starts to rise. Under higher cathodic bias applied in the dark, hydroxyl groups and metallic gallium are accumulated at the surface, which is accompanied by a decrease in work function of the semiconductor. Accumulation of hydroxyl groups can be related only to splitting of water molecules at the semiconductor/electrolyte interface, since the aqueous HCl solution contains no hydroxyl groups intrinsically. Accumulation of hydroxyl groups and metallic gallium is accelerated under visible light illumination, which indicates participation of photogenerated electrons in the surface electrochemical reactions. The formation of the metallic gallium without simultaneous metallic indium formation testifies that the In–P bonds of the GaInP2 compound are more stable against cathodic corrosion than the Ga–P bonds.

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“…The results are in agreement with what is known about the behaviour of chlorinated GaAs and InP surfaces under thermal and plasma excitation. They can be explained considering that GaAs and InP differ in the formation of surface chlorides [4][5], in the volatility of the chlorides [6] and in their ion-bombardment-stimulated desorption [7][8][9]. Of GaCl x , AsCl x , InCl x , and PCl x (x = 1, 2, 3) chloride species that form on GaAs and InP, respectively, the removal of GaCl 3 , AsCl 3 , InCl 3 , and PCl 3 is believed to be the most important for their dry etching.…”

Section: Resultsmentioning

confidence: 99%

CCl4-based reactive ion etching of semi-insulating GaAs and InP

et al. 2006

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Reactive ion etching of semi-insulating (100) GaAs and (100) InP substrates in CCl4/He-based plasma at 25 • C was performed at rf power between 43 and 153 W and reactor pressures of 0.8 and 1.5 Pa. The etching rates of GaAs and InP and surface quality were evaluated by AFM. With the pressure, the etching rates of GaAs and InP increased and decreased, respectively. InP was removed at 0.8 Pa at rates ( ∼ 8 ÷ 54 nm min −1 ) comparable with those of GaAs ( ∼ 3 ÷ 71 nm min −1 ). At 1.5 Pa, InP was etched at negligible rates (∼ 1 ÷ 4 nm min −1 ). GaAs exhibited none or little trenching at edges of resist patterns at 0.8 and 1.5 Pa. InP was slightly trenched at low bias at 0.8 Pa, but it was heavily trenched at 1.5 Pa over the entire interval of rf power used. GaAs surfaces were smoother compared with those of InP after etching. The average root-mean-square roughness σ of 10 × 10 µm 2 -sized areas of GaAs and InP surfaces after RIE at 0.8 Pa, 100 W, and -150 V was 0.9 nm and ∼ 1.8 nm, respectively. PACS : 52.77.Bn, 81.65.Cf

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Surface etching of InP(100) by chlorine

Cited by 16 publications

References 40 publications

Nitridation of InP(100) surface studied by synchrotron radiation

Nitridation of InP(100) surface studied by synchrotron radiation

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

CCl4-based reactive ion etching of semi-insulating GaAs and InP

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Surface etching of InP(100) by chlorine

Cited by 16 publications

References 40 publications

Nitridation of InP(100) surface studied by synchrotron radiation

Nitridation of InP(100) surface studied by synchrotron radiation

Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

CCl4-based reactive ion etching of semi-insulating GaAs and InP

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Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions