Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: Limiting effects on device potential

Grabowska, J.; Meaney, A.; Mosnier, Jean-Paul; Henry, M.O.; Duclère, J.-R.; McGlynn, Enda

doi:10.1103/physrevb.71.115439

Cited by 193 publications

(144 citation statements)

References 31 publications

Supporting

Mentioning

137

Contrasting

Order By: Relevance

“…Nonradiative recombination rates are generally thermally activated. If there is only one nonradiative recombination channel, one can obtain 49,50 …”

Section: Resultsmentioning

confidence: 99%

“…Grabowska et al pointed out that the quenching behavior of band edge emission is very important in evaluating the effect of nonradiative centers in ZnO nanostructure materials. 49,50 Under optical excitation, two competitive carrier quenching processes exist in the materials, one is radiative and the other is nonradiative. Nonradiative recombination rates are generally thermally activated.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Indirect optical transition due to surface band bending in ZnO nanotubes

Yang

Zhao

Israr

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

ZnO nanotubes ͑ZNTs͒ have been successfully evolved from ZnO nanorods ͑ZNRs͒ by a simple chemical etching process. Two peaks located at 382 and 384 nm in the UV emission region has been observed in the room temperature photoluminescence ͑PL͒ spectrum of ZNTs since the surface band bending in ZNTs induces the coexistence of indirect and direct transitions in their emission process. In addition, a strong enhancement of total luminescence intensity at room temperature in ZNTs has also be observed in comparison with that of ZNRs. Both temperature-dependent PL and time-resolved PL results not only further testify the coexistence of indirect and direct transitions due to the surface band bending but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their stronger luminescence intensity.

show abstract

“…Nonradiative recombination rates are generally thermally activated. If there is only one nonradiative recombination channel, one can obtain 49,50 …”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Indirect optical transition due to surface band bending in ZnO nanotubes

Yang

Zhao

Israr

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Whereby using alumina (Al 2 O 3 ) and silicon will result in the growing of nanorods [49]. Vapour-liquid-solid (VLS) mechanism using a gold catalyst was used to grow 2D ZnO nanowalls in this process, a high deposition temperature is used (~900-1100°C) [50][51][52].…”

Section: Miscellaneous Methods For Preparing 2d Znomentioning

confidence: 99%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

View full text Add to dashboard Cite

In this chapter, we review the application of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored. The lack in the study of the 2D ZnO UV sensors might be due to the difficulties of controlling the growth of the 2D ZnO compared to the one-dimensional (1D) ZnO structures.

show abstract

“…Nanostructures of ZnO have received much interest in the research literature over the past decade and have been produced in many morphologies including thin films [1], nanorods, nanowires [2][3][4][5], nanowalls [6], nanodisks [7], nanohelixes, nanosprings, nanorings, nanobelts [8] and nanobowls. [9] One area of particular interest has being the production of ZnO nanorods for use in optical applications and studies.…”

Section: Introductionmentioning

confidence: 99%

Growth of isotopically enriched ZnO nanorods of excellent optical quality

Gray

Cullen

Byrne

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

We have produced isotopically enriched ZnO nanorods using Zn-enriched ZnO source powder by vapour phase transport on silicon substrates buffer-coated with unenriched ZnO seed layers. SEM and XRD data confirm successful growth of high quality, dense, c-axis aligned nanorods over a substantial surface area. Raman data show a shift of >1 cm -1 in the peak position of the Raman scattered peaks due to the E 2 low and E 2 high phonon modes when the Zn isotope is changed from 64 Zn to 68 Zn, consistent with previous work, thus confirming successful isotopic enrichment. SIMS data provides additional confirmation of enrichment.The optical quality (as determined by photoluminescence feature intensity and linewidth) is excellent. Samples with Zn isotopic enrichment ranging from 64 ZnO to 68 ZnO display a shift in recombination energy of the bound excitons at the band edge (3.34 -3.37 eV) of ~ 0.6 meV. This blue shift is also consistent with previously published data, further confirming *Manuscript Revised Click here to view linked References 2 both the excellent optical quality and successful isotopic substitution of ZnO nanorods using this relatively simple growth method.

show abstract

Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: Limiting effects on device potential

Cited by 193 publications

References 31 publications

Indirect optical transition due to surface band bending in ZnO nanotubes

Indirect optical transition due to surface band bending in ZnO nanotubes

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Growth of isotopically enriched ZnO nanorods of excellent optical quality

Contact Info

Product

Resources

About