Surface excitons in ZnO crystals

Travnikov, V. V.; Freiberg, Arvi; Savikhin, Sergei

doi:10.1016/0022-2313(90)90006-w

Cited by 101 publications

(61 citation statements)

References 17 publications

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“…The lifetime τ of the excitons in bulk ZnO is measured to be of several tens to hundreds picoseconds depending on temperature [20]. Thus, two excitation regimes we used, nanosecond and femtosecond, are principally different.…”

Section: Resultsmentioning

confidence: 99%

Production of gas phase zinc oxide nanoclusters by pulsed laser ablation

Ozerov

Bulgakov

Nelson

et al. 2005

Applied Surface Science

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We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the ablation chamber. The time evolution of the spectra as well as their dependence on the ambient gas pressure are discussed.

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Section: Resultsmentioning

confidence: 99%

Production of gas phase zinc oxide nanoclusters by pulsed laser ablation

Ozerov

Bulgakov

Nelson

et al. 2005

Applied Surface Science

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“…The observed relative shift by about 0.5 meV of the corresponding PL peak positions between the two materials is likely due to their difference in residual strain. The broader SX line can be tentatively attributed to recombination of surface excitons [21], which are common in PL spectra of nanostructured ZnO with a large surfaceto-volume ratio. Most importantly, in all samples the BX transitions are also observed when the excitation photon energy is tuned below the BX energies.…”

Section: Resultsmentioning

confidence: 88%

Efficient upconversion of photoluminescence via two-photon absorption in bulk and nanorod ZnO

et al. 2012

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Abstract.Efficient upconversion of photoluminescence (PL) from donor bound excitons is revealed in bulk and nanorod ZnO. Based on excitation power dependent PL measurements performed with different energies of excitation photons, two-photon-absorption (TPA) and two-step TPA (TS-TPA) processes are concluded to be responsible for the upconversion. The TS-TPA process is found to occur via a defect/impurity (or defects/impurities) with an energy level (or levels) lying within 1.14-1.56 eV from one of the band edges, without involving photon recycling. One of the possible defect candidates could be V Zn . A sharp energy threshold, different from that for the corresponding one-photon absorption, is observed for the TPA process and is explained in terms of selection rules for the involved optical transitions.

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“…Приме-чательно, что в исследуемую спектральную область попадает излучение связанного на дефекте биэкситона (полоса BM 3 , 3.3556 eV, 369.4 nm) [20]. Спектральное положение I x хорошо совпадает с положением поло-сы BM 3 . О природе центра, на котором локализуется экситонная молекула, данные отсутствуют.…”

Section: рисunclassified

“…О локализации экситонов на поверхностных центрах акцепторного типа в полупроводниках A 2 B 6 впервые сообщалось в [2,3]. В низкотемпературных спектрах люминесценции монокристаллов CdS, CdSe и ZnO на-блюдалась полоса излучения, приписанная поверхност-ному экситону.…”

Section: Introductionunclassified

“…В спектрах фотолюминесценции (ФЛ) тонких пленок и других наноструктур ZnO с разви-той поверхностью при низких температурах полоса излучения поверхностного экситона (SX) может быть доминирующей структурой [4]. При интерпретации по-лосы SX в основном принимается модель, предложенная в [3,4] -локализация экситонов в неоднородном потен-циале, создаваемом акцептороподобными поверхностны-ми центрами.…”

Section: Introductionunclassified

See 1 more Smart Citation

Фотоиндуцированные эффекты в спектрах люминесценции ZnO

Акопян¹,

Лабзовская²,

Novikov³

et al. 2018

Физика Твердого Тела

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The effect of intense UV irradiation on the photoluminescence (PL) spectra of ZnO powders and nanocrystalline films obtained by atomic layer deposition (ALD) was investigated. At room temperature, the behavior of the spectra under continuous UV irradiation in multiple vacuum-atmosphere cycles was studied. The changes in the intensities of exciton radiation and radiation in the “green” band region, associated with the phenomena of oxygen photodesorption and photoadsorption, are discussed. In the temperature range of 5–300 K, the effect of strong UV irradiation on the near-edge luminescence spectrum of ZnO films was studied. The nature of a new line arising in the photoluminescence spectra of an irradiated film in the region of emission of bound excitons is discussed.

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Surface excitons in ZnO crystals

Cited by 101 publications

References 17 publications

Production of gas phase zinc oxide nanoclusters by pulsed laser ablation

Production of gas phase zinc oxide nanoclusters by pulsed laser ablation

Efficient upconversion of photoluminescence via two-photon absorption in bulk and nanorod ZnO

Фотоиндуцированные эффекты в спектрах люминесценции ZnO

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