2020
DOI: 10.1002/chem.201905173
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Surface Functionalization of Black Phosphorus with a Highly Reducing Organoruthenium Complex: Interface Properties and Enhanced Photoresponsivity of Photodetectors

Abstract: In this work, ah eterostructure obtainedb y vacuum evaporation of as trong molecular n-dopant, [RuCp*(mes)] 2 ,o nto black phosphorus (BP) is reported, along with the systematic investigation of the interfacial structure and properties by variousi ns itu characterization techniques. Ultraviolet photoelectron spectra (UPS) showed al arge decrease in the work functiono fB Pa nd an ew peak within the bandgap,w hich is attributedt oe lectron transfer from dopants to the underlying BP.The electrons trapped at the i… Show more

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Cited by 5 publications
(2 citation statements)
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References 51 publications
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“…For example, high levels of bulk doping in OFETs severely compromise on/off ratios, but ultralow doping can decrease threshold voltage by filling traps, as demonstrated with [RuCp*(1,3,5-Me 3 C 6 H 3 )]:C 60 , 63 while heavier doping levels confined to the vicinity of the source/drain contacts can increase the effective mobility through reducing contact resistance, as demonstrated with (RhCp) 2 :C 60 . 64 In addition to the doping of OSCs, the dimers have also been used: to decrease the work function and increase the conductivity of two-dimensional materials such as graphene, 65,66 black phosphorus, 67 and few-layer group 6 metal dichalcogenides; 68,69 to convert ambipolar single-walled carbon nanotube transistors to n-channel devices; 66 and to decrease the work function of inorganic (semi)conductor surfaces. 70−72 A particularly low work function of 2.2 eV was obtained for a ZnO crystal, allowing its band positions to be aligned with the frontier orbitals of a planarized quaterphenyl derivative, converting a "type II" heterojunction, at which emission is quenched by exciton dissociation, to a highly emissive "type I" junction.…”
Section: ■ Doping Behaviormentioning
confidence: 99%
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“…For example, high levels of bulk doping in OFETs severely compromise on/off ratios, but ultralow doping can decrease threshold voltage by filling traps, as demonstrated with [RuCp*(1,3,5-Me 3 C 6 H 3 )]:C 60 , 63 while heavier doping levels confined to the vicinity of the source/drain contacts can increase the effective mobility through reducing contact resistance, as demonstrated with (RhCp) 2 :C 60 . 64 In addition to the doping of OSCs, the dimers have also been used: to decrease the work function and increase the conductivity of two-dimensional materials such as graphene, 65,66 black phosphorus, 67 and few-layer group 6 metal dichalcogenides; 68,69 to convert ambipolar single-walled carbon nanotube transistors to n-channel devices; 66 and to decrease the work function of inorganic (semi)conductor surfaces. 70−72 A particularly low work function of 2.2 eV was obtained for a ZnO crystal, allowing its band positions to be aligned with the frontier orbitals of a planarized quaterphenyl derivative, converting a "type II" heterojunction, at which emission is quenched by exciton dissociation, to a highly emissive "type I" junction.…”
Section: ■ Doping Behaviormentioning
confidence: 99%
“…In addition to the doping of OSCs, the dimers have also been used: to decrease the work function and increase the conductivity of two-dimensional materials such as graphene, , black phosphorus, and few-layer group 6 metal dichalcogenides; , to convert ambipolar single-walled carbon nanotube transistors to n-channel devices; and to decrease the work function of inorganic (semi)­conductor surfaces. A particularly low work function of 2.2 eV was obtained for a ZnO crystal, allowing its band positions to be aligned with the frontier orbitals of a planarized quaterphenyl derivative, converting a “type II” heterojunction, at which emission is quenched by exciton dissociation, to a highly emissive “type I” junction …”
Section: Doping Behaviormentioning
confidence: 99%