Surface Functionalization of III–V Nanowires

A Concept from Sensor to Sustainability in Machining – An Interdisciplinary Approach over a Wide TRL Range

“…Widespread implementation of sensors directly into harsh and hard to access industrial environments such as machining has been an ongoing scientific and technological goal for many years [1] but has still not occurred. One reason for renewed optimism is the significant progress in micro and nanofabrication which has occurred in the last decade [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Exact bottom-up synthesis is now possible for a wide range of electronic materials with varying properties and top-down lithography has evolved not only in terms of miniaturization (which is well publicized [17]), but also in regard to the creation of a wide variety of 1D, 2D and 3D structures [12][13][14][15][16][17][18][19][20][21][22].…”

“…One reason for renewed optimism is the significant progress in micro and nanofabrication which has occurred in the last decade [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Exact bottom-up synthesis is now possible for a wide range of electronic materials with varying properties and top-down lithography has evolved not only in terms of miniaturization (which is well publicized [17]), but also in regard to the creation of a wide variety of 1D, 2D and 3D structures [12][13][14][15][16][17][18][19][20][21][22]. Metal droplet seeded or selective area growth using Chemical Vapor Deposition (CVD) methods makes it possible to form extremely well-defined compound structures with electrical device properties in specific locations even hidden from line-of-sight of the CVD tool [12][13][14].…”

“…Often the manufacturing is combined with advanced characterization using both electron microscopes and synchrotron-based X-ray studies [19][20][21][22]. This makes it possible to do intelligent choices when developing a new fabrication process and not rely on trial-anderror.…”

Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires: Interface and Morphology Control for Optoelectronics and Quantum Technologies

“…38 This in turn leads to improved properties of the NWs. 31,32,37,39 The hydrogen radicals will react with the oxide and other contaminants on the surface to form more volatile compounds, which desorb below the temperature where the samples decompose. 40,41 However, graphene can act as a barrier for diffusion to and from the underlying substrate that can lead to an inhibition of the deoxidation processes.…”

“…For III–V semiconductor NWs, this has been shown in many studies. − Annealing semiconductor surfaces in atomic hydrogen has been proven to be efficient in removing native oxides and achieving clean, defect-free surfaces . This in turn leads to improved properties of the NWs. ,,, The hydrogen radicals will react with the oxide and other contaminants on the surface to form more volatile compounds, which desorb below the temperature where the samples decompose. , However, graphene can act as a barrier for diffusion to and from the underlying substrate that can lead to an inhibition of the deoxidation processes. − Furthermore, passivation of dangling bonds at the interface between graphene and SiC was impeded at temperatures up to ∼800 °C, and as a result, the sample underneath the graphene could not be passivated. Therefore, the potential of atomic hydrogen cleaning underneath graphene is a nontrivial question with relevance for applications using the systems’ electronic or optical properties.…”