We investigate the interfacial electronic structure of n-type bulk MoS 2 upon the adsorption of CoPc and CoPcF 16 monolayers and few layers using advanced spectroscopic techniques. These include X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), angle-resolved photoelectron spectroscopy (ARPES), and ultraviolet photoelectron spectroscopy (UPS). Our findings indicate that the adsorption of CoPc enhances the degree of n-doping at the interface with MoS 2 . In contrast, CoPcF 16 acts as an electron acceptor and results in a nearly intrinsic position of the Fermi level of MoS 2 . Furthermore, we note the formation of an induced gap state near the valence band maximum for monolayer CoPcF 16 on MoS 2 . These observations underscore the potential to finetune the interfacial electronic properties of transition metal dichalcogenides through molecular functionalization for application in optoelectronic devices.