Surface-growth-mode-induced strain effects on the metal–insulator transition in epitaxial vanadium dioxide thin films

Yang, Mengmeng; Yang, Yuanjun; Hong, Bin; Wang, Liangxin; Luo, Zhenlin; Li, Xiaoguang; Kang, Chaoyang; Li, Ming; Zong, Haitao; Chen, Gao

doi:10.1039/c5ra13490k

Cited by 46 publications

(40 citation statements)

References 38 publications

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“…In general, the estimation of the impurity phase volume in a solid state sample is possible by the comparison of the structure factor and intensity of chosen peaks of each phase in a XRD pattern . But we realized this method is not applicable in our case because the VO 2 film could be deposited on the sapphire (0001) surface with a preferred crystal axis (020) of M ‐VO 2 structure due to the lattice match between two phases and more over the degree of the preference related on the thickness of the deposited film . Therefore, the analytical estimation of the amount of the impurity phase in the film is difficult in this case and only qualitative discussion will be acceptable at this moment.…”

Section: Resultsmentioning

confidence: 99%

The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

Lee

Kim

2018

Bulletin Korean Chem Soc

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We present the effects of organic additives (sucrose, polyvinylalcohol [PVA], and polyvinylpyrrolidone [PVP]) on a precursor solution (VO2+ ion) to the physicochemical properties of the thermally deposited VO2 film on sapphire (0001) plane. All the VO2 films, which deposited with assistance of the organic chemicals, showed a sudden change in resistance measurement near 340 K, but the sudden change did not appear in the film which deposited without the organic additives. The X‐ray diffractometer patterns of the films show monoclinic type VO2 (M‐VO2) as main phase, which has preferred growing axis (020) and (−211), and V2O5 as impurity phase. The intensity of the impurity peaks was minimized in PVP‐assisted deposition and showed the best performance as a smart window, ~10% transmittance gap between low and high temperature phases at 1550 nm. The atomic ratio of oxygen/carbon in the organic additives (1:1 in sucrose –[CH2O]n–, 1:2 in PVA –[C2H4O]n–, and 1:6 in PVP –[C6H9NO]n–) seems an important condition to determine the performance of the smart window.

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Section: Resultsmentioning

confidence: 99%

The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

Lee

Kim

2018

Bulletin Korean Chem Soc

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“…2,3 Vanadium dioxide (VO 2 ), as a key material of thermochromic smart windows, has been consistently studied since the discovery of its MIT at ~340 K in 1959. 6,7 This property can be exploited to intelligently control near-infrared light radiation, which carries a large amount of solar energy, and makes VO 2 a promising material for use in smart windows. 6,7 This property can be exploited to intelligently control near-infrared light radiation, which carries a large amount of solar energy, and makes VO 2 a promising material for use in smart windows.…”

Section: Introductionmentioning

confidence: 99%

First-principles study on the phase transition temperature of X-doped (X = Li, Na or K) VO₂

et al. 2016

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Vanadium dioxide (VO 2 ) is one of the most interesting thermochromic materials with a phase transition temperature of 340 K. Our first-principles calculation indicates that Li, Na or K dopants with a doping level of 1 atomic percentage could reduce the phase transition temperature of VO 2 by 43K, 49K, 94 K, respectively. In addition, the V-V chains feature the dimerization characteristics in the Li, Na or K doped VO 2 (R).The calculated electronic structures and optical properties indicate that K is as an appropriate doping element for VO 2 , since it can effectively lower the phase transition temperature as well as enhance the near-infrared absorption.10 and the K-doped VO 2 (M) for the near infrared light. Fig. 5(a) shows a weak absorption for the pure VO 2 (M), indicating that infrared light could easily penetrate the VO 2 (M), in good agreement with the experimental observations. When the systems are doped with K, the VO 2 (M) exhibits a larger absorption coefficient for the light with energy less than 1.6 eV in Fig. 3(b), suggesting the introduction of K increases the absorption of the infrared light in VO 2 (M). The optical properties of the K-doped VO 2 (M) can be explained through its electronic structures. As displayed in Figure 3(h), there is a 0.562 eV band-gap near the bottom of conduction band of K-doped VO 2 (M). The infrared light would lead to electronic transitions from the occupied state to the unoccupied states, which just corresponds to the strong absorption for the light with energy less than 1.6 eV. Concluding remarksIn summary, by using first-principles calculation, we investigated the behavior of Li, Na or K-doping and its influence on the transition temperature (T c ) of VO 2 . The Li atom is easily located at the tetrahedral interstitial site in VO 2 , whereas the Na or K atom is easily located at the octahedral interstitial site, which can be ascribe to different atomic sizes of the dopants. The phase transition temperature of VO 2 can be reduced by 43 K, 49 K or 94 K with 1% of Li, Na or K doping, respectively. The atomic structures show that the V-V chains feature the dimerization characteristics in the Li, Na or K doped VO 2 (R). The K can be selected as an appropriate doping alkali for VO 2 , since it can lower the phase transition temperature and enhance the near-infrared absorption.

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“…And the (020) reflection is enhanced only in VO 2 /sapphire. This anisotropy of the film/sapphire (0001) plane was observed in many other deposition processes . The compatibility between VO 2 lattice and substrate lattice would be the origin of the anisotropic growing on the substrate surface.…”

Section: Resultsmentioning

confidence: 79%

“…According to the reports, this kind of shift originated from the lattice mismatch between the M‐VO 2 (020) and sapphire (0001) planes. For example, the size (25.61 Å 2 ) of the repeat unit in sapphire (0001) is smaller than that (25.97 Å 2 ) of M‐VO 2 (020) …”

Section: Resultsmentioning

confidence: 99%

An Invariable Temperature during the Phase Transition of W Doped VO₂ Film

Hong

Lee

Kim

2020

Bulletin Korean Chem Soc

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The phase transition temperature of the functional VO2 films was adjusted to near room temperature by the W6+ doping. The V1−xW xO2 (0 ≤ x ≤ 0.04) films were deposited by the one‐step thermal decomposition process (30 min at 793 K) on a sapphire (0001) substrate under inert conditions. The electrical resistivity of the films showed that the ending point of the metal to insulator transition (TCE) of the pure VO2 phase transition, which appeared at ~310 K, was shifted down to ~265 K along with the increased doping level of W. The hysteresis gap between cooling and heating cycles in the plot of temperature vs. electrical resistivity for the films decreased from ~25 to ~2 K by the increased W level. The transition temperature shift and the hysteresis gap decrement were also observed in the measurement of infrared (IR) transmittance near the transition temperature. The degree of IR (1550 nm) transmittance of the VO2 film in the low‐temperature region was decreased from ~80 to ~40% by the W doping, but nearly the same transmittance in the high‐temperature region. Even though the characteristics of the transition in resistivity and transmittance measurements were greatly altered by the W doping, the starting point of the metal to insulator transition (TCS) was nearly constant, TCS ~338 K.

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Surface-growth-mode-induced strain effects on the metal–insulator transition in epitaxial vanadium dioxide thin films

Abstract: The surface growth mode can induce the anomalous compressive strain in thicker VO2/Al2O3 epitaxial films, which can't be explained by conventional epitaxial lattice-mismatch. Strain may be an effective tool for manipulating MIT of the VO2 films.

Cited by 46 publications

References 38 publications

The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

First-principles study on the phase transition temperature of X-doped (X = Li, Na or K) VO₂

An Invariable Temperature during the Phase Transition of W Doped VO₂ Film

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Surface-growth-mode-induced strain effects on the metal–insulator transition in epitaxial vanadium dioxide thin films

Abstract: The surface growth mode can induce the anomalous compressive strain in thicker VO2/Al2O3 epitaxial films, which can't be explained by conventional epitaxial lattice-mismatch. Strain may be an effective tool for manipulating MIT of the VO2 films.

Cited by 46 publications

References 38 publications

The Control of Transition Behavior of VO2 Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

The Control of Transition Behavior of VO2 Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

First-principles study on the phase transition temperature of X-doped (X = Li, Na or K) VO2

An Invariable Temperature during the Phase Transition of W Doped VO2 Film

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Product

Resources

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The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

The Control of Transition Behavior of VO₂ Film Deposited on Sapphire (0001) Substrate by the Organic Polymer‐Assisted Thermal Deposition

First-principles study on the phase transition temperature of X-doped (X = Li, Na or K) VO₂

An Invariable Temperature during the Phase Transition of W Doped VO₂ Film