Surface-induced resistivity of thin metallic films bounded by a rough fractal surface

Muñoz, Raúl C.; Finger, Ricardo; Arenas, Claudio; Kremer, Germán; Moraga, Luis

doi:10.1103/physrevb.66.205401

Cited by 26 publications

(18 citation statements)

References 19 publications

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“…91,92 These parameters determine the efficiency of the momentum transfer to the film atoms 93 and have been shown to have implications on the film microstructure 91 as well as on mechanical, optical, and electrical properties. 90,94,95 In HiPIMS, high pulsed ion fluxes are made available at the substrate. In the next sections the effect of the energetic bombardment during HiPIMS on the growth and the properties of elemental and compound films is reviewed.…”

Section: Thin Film Processingmentioning

confidence: 99%

“…113,114 C. Control of film microstructure and interface engineering Polycrystalline films grown by PVD techniques exhibit a variety of microstructures with respect to the size, the morphology, and the relative orientation of the crystallites. 91,119 These features have, for instance, implications for the mechanical strength 120 and the electrical conductivity 94,95,121 of the film. The microstructure is determined primarily by surface and bulk diffusion processes, 91,119 which are controlled by the deposition temperature, the bombardment by energetic species, and the incorporation of impurities that act as inhibitors for the crystal and grain growth.…”

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

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An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

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Section: Thin Film Processingmentioning

confidence: 99%

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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“…The wall-driven part of the matrix γ jj [Eq. (15)] in the limit τ b −→ ∞ corresponds to the first, δ-type, term in expansion (28) and becomes relatively simple. Using the notations of Ref.…”

Section: B the Mixing Interferencementioning

confidence: 99%

“…26 and 27 in the white-noise approximation for a rough surface (see also the extension of this approach beyond the white noise in Ref. 28). This approach corresponds to adding the surface scattering as a perturbation of the type 23 to the single-particle Green's function that already includes the bulk scattering.…”

Section: B Theoretical Backgroundmentioning

confidence: 99%

Quantum size effect and the two types of interference between bulk and boundary scattering in ultrathin films

Chatterjee

Meyerovich

2011

Phys. Rev. B

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“…[45] This opens up a possibility to tailor the electrical and optical properties of the films, as these properties depend on the microstructure. [45,[49][50][51][52] HiPIMS also has its limitations. One major drawback is the low deposition rate of some materials compared to dcMS, when both are operated at the same average target power.…”

Section: High Power Impulse Magnetron Sputteringmentioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Surface-induced resistivity of thin metallic films bounded by a rough fractal surface

Cited by 26 publications

References 19 publications

An introduction to thin film processing using high-power impulse magnetron sputtering

An introduction to thin film processing using high-power impulse magnetron sputtering

Quantum size effect and the two types of interference between bulk and boundary scattering in ultrathin films

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

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